BAP50-05W JIANGSU | Alldatasheet
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03Z Plastic-Encapsulate Diodes FBAP50-05W pin Diodes
DESCRIPTION
FEATURES
z Two elements in common cathode configuration in a small-sized package z Low diode capacitance z Low diode forward resistance.. APPLICATION General RF applications. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: W4 1 2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Continuous reverse voltage VR V Continuous Forward Current IF mA Power Dissipation (TA=90℃) Pd 150 mW thermal resistance from junction to soldering point Rthj-s 250 K/W Junction temperature Tj -65~+150 Storage temperature range TSTG -65~+150 WBFBP-03Z (2×2×0.5) unit: mm
Electrical Characteristics @TA=25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Continuous reverse voltage VR V IR=10µA Forward voltage VF 1.1 V IF=50mA Reverse current IR 100 nA VR=50V Cd1 1.1 pF VR=0V,f=1MHz Cd2 0.6 pF VR=1V,f=1MHz Diode capacitance Cd3 0.5 pF VR=5V,f=1MHz rD Ω IF=0.5mA , f=100MHz rD Ω IF=1mA , f=100MHz Diode forward resistance rD Ω IF=10mA , f=100MHz charge carrier life time τL 1.05 μS When switched from IF=10mA to IR=6mA; RL=100;measured at IR=3mA series inductance LS 1.6 nH IF=100mA; f=100MHz Typical Characteristics FBAP50-05W
Min. Max. Min. Max. A 0.450 0.550 0.018 0.022 0.000 0.100 0.000 0.004 b 0.150 0.250 0.006 0.010 D 1.900 2.100 0.075 0.083 E 1.900 2.100 0.075 0.083 e L k z 0.024 REF. 0.500 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 1.300 TYP. 0.052 TYP. 1.100 REF. 0.043 REF. 0.600 REF. 0.500 REF. 0.020 REF. 0.400 REF. 0.016 REF.