BAP50-03 HTSEMI | Alldatasheet
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GENERAL PURPOSE PIN DIODES
FEATURES
y L o w d i o d e f o r w a r d r e s i s t a n c e MARKING: A81 Maximum Ratings and Electrical Characteristics, Single Diode @T A =25℃ Parameter Symbol Limits Unit Continuous reverse voltage V R 50 V Continuous Forward Current I F 50 mA Power Dissipation A =90℃) Pd 200 mW Thermal Resistance Junction to Ambient R θJA
85 K/W
j -65~+150 ℃ Storage temperature T STG -65~+150 ℃ Electrical Ratings @T A =25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Continuous reverse voltage V R
50 V I
R =10µA Forward voltage V F
1.1 V I
F =50mA Reverse current I R 100 nA V R =50V C d1A 0.91 pF V R =0V,f=1MHz C d1B 1.11 pF V R =0V,f=1MHz C 0.55 pF V R =1V,f=1MHz Diode capacitance C 0.35 pF V R =5V,f=1MHz r D 40 Ω I F =0.5mA , f=100MHz; note1 r D 25 Ω I F =1mA , f=100MHz;note1 Diode forward resistance r D 5 Ω I F =10mA , f=100MHz;note1 SOD-323 Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. BAP50-03 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu BAP50-03