2SB863 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB863
DESCRIPTION
- With TO-3P(I) package
- Complement to type 2SD1148
APPLICATIONS
- Power amplifier applications
- Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -1 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA; IB=0 -140 V VCEsat Collector-emitter saturation voltage I C=-5.0A ;IB=-0.5A -0.60 -2.0 V VBE Base-emitter on voltage I C=-5A ; VCE=-5V -0.96 -1.5 V ICBO Collector cut-off current V CB=-140V; IE=0 -5.0 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -5.0 µA hFE-1 DC current gain I C=-1A ; VCE=-5V 55 160 hFE-2 DC current gain I C=-5A ; VCE=-5V 25 fT Transition frequency I C=-1A ; VCE=-10V 15 MHz COB Collector output capacitance I C=0;f=1MHz ; VCB=-10V 400 pF hFE-1 Classifications R O 55-110 80-160
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB863