B85P03 WXDH | Alldatasheet
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Technical content
ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 10 B85P03
1 Description
These P -channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent RDSON with low gate charge. Which accords with the RoHS standard.
2 Features
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse Transfer Capacitances
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
3 Applications
- used in various power switching circuit for system miniaturization and higher efficiency.
- Portable equipment and battery powered systems
- Alertor Application 85A 100V P-channel Enhancement Mode Power MOSFET
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter Symbol Value Units Drian-Source V oltage VDS -30 V Gate-Drain V oltage VGS ± 25 V Drain Current(continuous) ID（T=25℃） （T=100℃） -85 A -60 A Drain Current(Pulsed)(Note 1) IDM -255 A Single Pulse Avalanche Energy(Note 5) EAS 180 mJ Total Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 50 W Junction Temperature Tj 150 ℃ storage Temperature Tstg -55～150 ℃ Maximum Temperature for soldering TL 300 ℃
4.2 Thermal Characteristics
Parameter Symbol Value Units Thermal Resistance Junction to Case-sink RthJC 2.5 ℃/W Thermal Resistance Junction to Ambient RthJA 62.5 ℃/W VDSS = -30V RDS(on) （TYP)=6.3mΩ ID = -85A TO-251
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4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
Parameter Symbol Test Condition Value Units min typ max Off Characteristics Drain-source Breakdown V oltage BVDSS ID=250μA,VGS=0V -30 -- -- V Drain-to-Source Leakage Current IDSS VDS=-30V ,VGS=0V ,TC=25℃ -- -- -1 μA VDS=-24V ,VGS=0V ,TC=125℃ -- -- -100 μA Gate-to-Source Forward Leakage IGSSF VGS=+20V -- -- 100 nA Gate-to-Source Reverse Leakage IGSSR VGS=-20V -- -- -100 nA On Characteristics(Note 3) Gate threshold voltage VGS(th) VDS=VGS,ID=-250μA -1 -- -3 V Drain-source on Resistan ce RDS(on) VGS=-10V ,ID=-30A -- 5.3 9 mΩ VGS=-6V ,ID=-30A 8.5 13 Dynamic Characteristics(Note 4) Forward Transfer conduc tance gfs VDS=-15V ,ID=-6A -- 19 -- S Input Capacitance Ciss VGS=0V ,VDS=-15V ,f=1.0MHz -- 4300 -- pF Output Capacitance Coss -- 1000 -- Reverse Transfer Capacit ance Crss -- 750 -- Switching Characteristics(note4) Turn-on Delay Time td(on) ID=-1A, VDD=-15V , VGS=-10V , RG=3Ω -- 20 -- nS Turn-on Rise Time tr -- 30 -- Turn-off Delay T ime td(off) -- 50 -- Turn-off Fall Time tf -- 35 -- Total Gate Charge Qg ID=-15A,VDD=-15V ,VGS=-10V -- 95 -- nC Gate-to-Source Charge Qgs -- 20 -- Gate-to-Drain(“Miller”)C harge Qgd -- 30 -- Drain-Source Diode Characteristics Diode Forward V oltage(N ote 3) VFSD VGS=0V ,IS=-30A -- -- -1.2 V Diode Forward Current (N ote 2) IS -- -- -85 A Reverse Recovery Time trr TJ=25℃,IF=-15A, dIF/dt=100A/μS,VGS=0V -- 40 -- nS Reverse Recovery Charge Qrr -- 30 -- nC Notes： 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: Guaranteed by design, not subject to production. 5. L=0.5mH,ID=-27A,VDD=-24V ,VGA TE=-30V ,Start TJ=25℃.
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5 Typical characteristics diagrams
A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 2 7 -May -2 0 1 7 Sh eet o f File: C :\\U sers\\A d min istrato r\\D esk to p \\8 5 P0 3 .d d bD raw n B y : 0 1 3 4 0 0.5 1.5 2.0 1.0 0 14 42 -50 0 100 150 0.6 1.5 200 1.8 1.2 0.9 1.2 0.2 0.4 1.00.6 100 0.8 0.1 50 17575 125 25 150 2.5 V GS=10 thru 5 V vDS -Drain-Source Vol tage(V) Figure.1 Output Characterristics I D -Drain Current(A) I Figure.2 Transfer Characteristics D -Drain-Current(A) Figure.3 Rdson-Drain Current R DS(ON ) -On-Resistance(mΩ) Tj -Junction T emperature( ℃) Figure.4 Rdson-Junction Temperature Normalized On-Resistance 1.41.2 Tj=25℃ Tj=150℃ VSD -Source Drain Voltage(V) Figure.5 Source Drain Diode Forward I S -Source Current(A) 0 100 Tc Case T emperature( ℃) Figure.6 Drain Current VS Case Temperature V GS=10V I D =10A VGS -Gate-Source Voltage(V) Tc=25 ℃. Tc=125 ℃. Tc=-5 5℃. I D -Drain-Current(A) V GS=10V I D -Drain-Current(A) 100 125
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5 Typical characteristics diagrams(continues)
A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 2 7 -May -2 0 1 7 Sh eet o f File: C :\\U sers\\A d min istrato r\\D esk to p \\8 5 P0 3 .d d bD raw n B y : 0 5 25 4500 6000 3000 1500 Ciss 0 150 30 90 120 0.1 1 10 0.01 0.1 0.0010.00010.00001 0.1 100 T o n T PD 0.01 0.01 0.1 1 10 100 100 m S 10 m S 1 m S DC Ta=25℃ Single Pluse 0 50 150 vDS -Drain-Source Vol tage(V) Figure.7 Capacitance C-C apa cita nce(pF) QG -Gate Charge Figure.8 Gate Charge VGS -G ate-Source Voltage(V) VD =50V I D =20A Frequency =1MHZ 25 100 125 175 Tc=25℃ Tj -Junction T emperature( ℃) Figure.9 Power De-rating Power Dissipation(W) BVDSS Limited vDS -Drain-Source Vol tage(V) Figure.10 Safe Operation Area I D -Drain Current(A) 30 35 7500 10S 100 1000 Squre Wave Pulse Duration(sec) Figure.11 Normalized Maximum Transient Thermal Impedance Z th jA Normalized Transient In Descending order
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6 Typical Test Circuit and Waveform
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A B C D 16151413121110987654321 D C B A Title N u mb er R ev isio nSize E D ate: 2 7 -May -2 0 1 7 Sh eet o f File: C :\\ U sers\\A dm in istrat or \\D esk to p \\ 模板\\w x d hq x t ( 1) . d dbD raw n B y : Same Type 50KΩ DUT VDS 200nF V 12V 200nF is DUT GS VGS 10V Q gs Q gd Q g VDS RL V DDDUT VGS RG 10V VDS 90% 10% VGS td(on) tr td(off) tf VDS I D DUT V DD L 10V RG BV SS I AS V DD I D(t) V DS(t) tp 1) Gate Charge T est Circuit & Waveform 2) Switching T est Circuit & Waveforms 3) Unclamped Inductive Test Circuit & Waveforms -3mA
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7 Product Names Rules
8 Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity 85P03 TO-220C 85P03 Pb-free Tube 1000/box F85P03 TO-220F F85P03 Pb-free Tube 1000/box B85P03 TO-251 B85P03 Pb-free Tube 1000/box D85P03 TO-252 D85P03 Pb-free Tape ＆ Reel 2500/box I85P03 TO-262 I85P03 Pb-free Tube 1000/box E85P03 TO-263 E85P03 Pb-free Tape ＆ Reel 800/box Rated V oltage Code With 2 Digital For Example: 100 on behalf of 100V 60 on behalf of 60v Special Function Code E on behalf of build-in ESD Nothing on behalf of not ESD Packaging Code 220F: F 220: Nothing 251: B 252: D 262: I 263: E Rated Current Code With 1-2 Digital, For Example: 4 on behalf of 4A, 10 on behalf of 10A, 08 on behalf of 0.8A Channel Polarity Code N on behalf of N channel P on behalf of P channel F X X N E X X
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9 Dimensions
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9 Dimensions(continues)
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10 Attentions
ROUM Semiconductor Technology CO.,LTD. reserves the right to change the specification without prior notice! The customer should obtain the latest version of the information before making the order and verify that the information is complete and up to date. It is the responsibility of the purchaser for any failure or failure of any semiconductor product under certain conditions. It is the responsibility of the purchaser to comply with safety standards and to take safety measures in the system design and machine manufacturing of Roma products in order to avoid potential risk of failure. Injury or property damage. Product promotion is endless, our company will be dedicated to provide customers with better products.
11 Appendix
Revision history: Date REV . Description Page 2017.04.15 1.0 Original