2SB686 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB686
DESCRIPTION
- With TO-3P(I) package
- Complement to type 2SD716
APPLICATIONS
- Power amplifier applications
- Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector- emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IE Emitter current 6 A PT Total power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(I)) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB686 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA ,IB=0 -100 V V(BR)EBO Emitter-base breakdown voltage I E=-10mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-4A; IB=-0.4A -2.0 V VBE Base-emitter voltage I C=-4A ; VCE=-5V -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -10 µA hFE DC current gain I C=-1A ; VCE=-5V 55 160 fT Transition frequency I C=-1A ; VCE=-5V 10 MHz Cob Collector output capacitance I E=0 ; VCB=-10V ;f=1MHz 270 pF hFE Classifications R O 55-110 80-160
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB686 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB686