2SB676 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB676
DESCRIPTION
- With TO-220C package
- High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.)
- DARLINGTON
APPLICATIONS
- For switching applications
- Hammer drive, pulse motor drive applications
- Power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector; connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -4 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB676 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA, IB=0 -80 V VCEsat Collector-emitter saturation voltage I C=-3A ,IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage I C=-3A ,IB=-6mA -2.0 V ICBO Collector cut-off current V CB=-100V, IE=0 -20 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -2.5 mA hFE-1 DC current gain I C=-1A ; VCE=-2V 2000 hFE-2 DC current gain I C=-3A ; VCE=-2V 1000 Switching times ton Turn-on time 0.15 µs ts Storage time 0.80 µs tf Fall time VCE=-30V, IB1=-IB2=-6mA RL=10@ 0.40 µs
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB676 PACKAGE OUTLINE Fig.2 Outline dimensions