2SB673 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB673
DESCRIPTION
- With TO-220C package
- DARLINGTON
- High DC current gain
- Low collector saturation voltage
- Complement to type 2SD633
APPLICATIONS
- High power switching applications
- Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -0.2 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB673 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA, IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage I C=-3A ,IB=-6mA -0.95 -1.5 V VCEsat-2 Collector-emitter saturation voltage I C=-7A ,IB=-14mA -1.3 -2.0 V VBEsat Base-emitter saturation voltage I C=-3A ,IB=-6mA -1.55 -2.5 V ICBO Collector cut-off current V CB=-100V, IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -4.0 mA hFE-1 DC current gain I C=-3A ; VCE=-3V 2000 15000 hFE-2 DC current gain I C=-7A ; VCE=-3V 1000 Switching times ton Turn-on time 0.8 µs tstg Storage time 2.0 µs tf Fall time IB1=-IB2=-6mA VCC=-45V,RL=15A 2.5 µs
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB673 PACKAGE OUTLINE Fig.2 Outline dimensions