B6010S

B6010S DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=7A,RDS(ON)<35mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) 7 A Drain Current – Continuous (TC=100℃ ) 3.8 IDM Drain Current – Pulsed1 20 PD Power Dissipation (TC=25℃ ) 1.5 W Power Dissipation – Derate above 25℃ --- TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 36 ℃/W RƟJA Thermal Resistance,Junction to Ambient 85 G D D D DS1 S S B6010S All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.63 --- V/℃ IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=0V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.24 --- mV/℃ RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=4A --- --- 35 mΩ VGS=4.5V,ID=2A --- --- 38 GFS Forward Transconductance VDS=5V, ID=4A --- 21 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1378 --- pF Coss Output Capacitance --- 86 --- Crss Reverse Transfer Capacitance --- 64 --- Switching Characteristics td(on) Turn-On Delay Time2,3 VDD=30V, ID=4A, RGEN=3.3Ω, VGS=10V --- 8 --- ns tr Rise Time2,3 --- 14.2 --- ns td(off) Turn-Off Delay Time2,3 --- 24.4 --- ns tf Fall Time2,3 --- 4.6 --- ns B6010S All d ata sheet.com

www.doingter.cn — 3 — Qg Total Gate Charge2,3 VGS=4.5V, VDS=48V, ID=4A --- 12.6 --- nC Qgs Gate-Source Charge 2,3 --- 3.2 --- nC Qgd Gate-Drain “Miller” Charge2,3 --- 6.3 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=1A,TJ=25℃ --- --- 1.2 V IS Continuous Source Current VG=VD=0V , Force Current --- --- 4.8 A ISM Pulsed Source Current --- --- 9.6 A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0.5 1 1.5 2 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7 VGS=5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=4A Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source B6010S All d ata sheet.com

www.doingter.cn — 4 — 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0 5 10 15 20 25 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID=4A 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 100 1000 10000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss Fig.8 Safe Operating AreaFig.7 Capacitance B6010S

— 5 — 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform B6010S 0086-0755-8278-9056 www.doingter.cn