B5817W TEL | Alldatasheet
Document overview
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Technical content
- 70 3. 70 0.55 1.05 1.6 B5817W SCHOTTKY BARRIER DIODE
FEATURES
P D: 4 5 0 m W ( T a m b = 2 5℃) Collector current I F: 1 A Collector-base voltage V R: 2 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ MARKING: SJ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V(BR) I R= 1mA 20 V Reverse voltage leakage current IR V R=20V 1 mA Forward voltage VF IF=1A IF=3A 0.45 0.75 V Diode capacitance CD V R=4V, f=1MHz 120 pF Unit: mm SOD-123