B5817W HTSEMI | Alldatasheet
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For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL Maximum Ratings and Electrical Characteristics, Single Diode @T A =25℃ Parameter Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak reverse voltage V RM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 20 30 40 V RMS Reverse Voltage V R(RMS) 14 21 28 V Average Rectified Output Current I O 1 A Peak forward surge current @=8.3ms I FSM 9 A Repetitive Peak Forward Current I FRM 1.5 A Power Dissipation Pd 500 mW Thermal Resistance Junction to Ambient R θJA 250 Storage temperature T STG -65~+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V (BR) I R = 1mA B5817W B5818W B5819W V Reverse voltage leakage current I R V R =20V B5817W V R =30V B5818W V R =40V B5819W mA B5817W I F =1A I F =3A 0.45 0.75 V B5818W I F =1A I F =3A 0.55 0.875 V Forward voltage V F B5819W I F =1A I F =3A 0.6 0.9 V Diode capacitance C D V R =4V, f=1MHz 120 pF SOD-123 ℃/W B5817W-5819W Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu