2SB511 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB511
DESCRIPTION
- With TO-220C package
- Complement to type 2SD325
- Low collector saturation voltage
APPLICATIONS
- Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -35 V VCEO Collector-emitter voltage Open base -35 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1.5 A ICM Collector current -peak -3.0 A Ta=25 1.75 PC Collector dissipation TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -50~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB511 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -35 V VCEsat Collector-emitter saturation voltage I C=-1.5A; IB=-0.15A -1.0 V VBE Base-emitter on voltage I C=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current V CB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-2V 40 320 hFE-2 DC current gain I C=-0.1A ; VCE=-2V 35 fT Transition frequency I C=-0.5A ; VCE=-5V 8 MHz hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB511 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)