2SB507 HOTTECH | Alldatasheet
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©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt@heketai.com BIPOLAR TRANSISTOR (PNP)
FEATURES
Complementary to NPN 2SD313 Low Collector-Emitter Saturation Voltage MECHANICALDATA Case:TO-220 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1 perJ-STD-020 Weight:2.30grams(approximate) MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -60 V Collector-Emitter Voltage V CEO -60 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous I C -3 A Collector Power Dissipation P C 1.75 W Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55~+150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) Parameter Symbol Min Max Unit Test conditions Collector-base breakdown voltage V (BR)CBO -60 V I C =-100uA, I E Collector-emitter breakdown voltage V (BR)CEO * -60 V I C =-10mA, I B Emitter-base breakdown voltage V (BR)EBO V I E =-100μA, I C Collector cut-off current I CBO -100 μA V CB =-20V, I E Collector cut-off current I CEO -5 mA V CE =-60V, I E Emitter cut-off current I EBO -1 mA V EB =-4V, I C DC current gain * h FE(1) * 40 320 V CE =-2V, I C =-1A h FE(2) * 40 V CE =-2V, I C =-0.1A Collector-emitter saturation voltage * V CE(sat) -1 V I C =-2A, I B =-200mA Base-emitter voltage* V BE -1.5 V V CE =-2V, I C =-1A Transition frequency f T
5 MHz V
=-5V, I C =-500mA, f=1MHz Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. THERMAL CHARACTERISTICS Parameter Symbol Max Unit Thermal resistance junction to case R θJA 4.16 °C/W CLASSIFICATION of h FE(1) Rank C D E F Range 40-80 60-120 100-200 160-320 1.BASE 2.COLLECTOR(CASE) 3.EMITTER TO-220 Equivalent Circuit
G U A N G D O N G H O TT E C H I N D U S T R IA L C O L T D E m a il h k t h e k e t a i c o m BIPOLAR TRANSISTOR ( PN P T y p i ca l Ch a r a c t e r i s t i c s There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I C V CE limits of the tran sistor that must be observed of reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is based on TJ(PK)=150 .At high case temperatures, thermal limi tation will reduce the power that can be handled to values less than the limitatio ns imposed by second breakdown
©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt@heketai.com BIPOLAR TRANSISTOR (PNP) Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 4.470 4.670 0.176 0.184 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 12.060 12.460 0.475 0.491 e
2.540 TYP
0.100 TYP
4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 3.560 3.960 0.140 0.156 Φ 3.735 3.935 0.147 0.155