4N60 WXDH | Alldatasheet

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Technical content

ROUMSemiconductorTechnologyCO.,LTD. Rev.1.0 www.roum.cn Page1of11 4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

/B4N60/D4N60 F4N60 MaximumDrian-SourceDCVoltage VDS 600 V MaximumGate-Drain Voltage VGS ±30 V DrainCurrent(continuous) ID（T=25℃） （T=100℃） 4 A 2.5 A DrainCurrent(Pulsed)(Note1) IDM 16 A Single PulseAvalancheEnergy(Note5) EAS 250 mJ PeakDiode Recovery dv/dt(Note6) dv/dt 5 V/ns TotalDissipation Ta=25℃ Ptot 2 2 W TC=25℃ Ptot 75 30 W JunctionTemperature Tj 150 ℃ storageTemperature Tstg -55～150 ℃ MaximumTemperatureforsoldering TL 300 ℃

4.2 Thermal Characteristics

/B4N60/D4N60 F4N60 ThermalResistanceJunction toCase-sink RthJC 1.67 4.17 ℃/W ThermalResistanceJunction toAmbient RthJA 62.5 62.5 ℃/W

1 Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHSstandard.

2 Features

  • FastSwitching
  • ESDImprovedCapability
  • LowONResistance(Rdson≤2.5Ω)
  • LowGate Charge(Typical Data:14.5nC)
  • LowReverseTransferCapacitances(Typical:4pF)
  • 100% SinglePulseAvalancheEnergyTest
  • 100% ΔVDS Test

3 Applications

  • usedinvarious powerswitching circuitforsystem miniaturization andhigher efficiency.
  • Powerswitch circuitof electronballastand adaptor. VDSS=600V RDS(on) （TYP)=2.1Ω ID=4A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B

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4.3 Electrical Characteristics(Tc=25℃,unlessotherwise noted)

Parameter Symbol TestCondition Value UnitsMin Typ Max Off Characteristics Drain-source Breakdown Voltage BVDSS ID=250μA,VGS=0V 600 -- -- V Drain-to-Source Leakage Current IDSS VDS=600V,VGS=0V,TC=25℃ -- -- 1 μA VDS=480V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Forward Leakage IGSSF VGS=+30V -- -- 100 nA Gate-to-Source ReverseLeakage IGSSR VGS=-30V -- -- -100 nA On Characteristics(Note3) Gatethresholdvoltage VGS(th) VDS=VGS,ID=250μA 2 -- 4 V Drain-source on Resist ance RDS(on) VGS=10V,ID=2A -- 2.1 2.5 Ω Dynamic Characteristics(Note4) Forward Transfer cond uctance gfs VDS=15V,ID=2A -- 3.5 -- S InputCapacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 590 -- pFOutput Capacitance Coss -- 55 -- Reverse Transfer Cap acitance Crss -- 4 -- Switching Characteristics(note4) Turn-on Delay Time td(on) ID=4A, VDD=300V, RG=10Ω -- 14 -- nSTurn-onRiseTime tr -- 15 -- Turn-off Delay Time td(off) -- 34 -- Turn-offFallTime tf -- 13 -- TotalGate Charge Qg ID=4A,VDD=480V,VGS=10V -- 14.5 -- nCGate-to-Source Charge Qgs -- 2.6 -- Gate-to-Drain(“Miller”)C harge Qgd -- 6.5 -- Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VFSD VGS=0V,IS=4A -- -- 1.5 V Diode Forward Current (Note 2) IS -- -- 4 A ReverseRecoveryTime trr TJ=25℃,IF=4A, dIF/dt=100A/μS,VGS=0V -- 250 -- nS Reverse Recovery Charge Qrr -- 1000 -- nC Reverse Recovery Current IRRM -- 8.03 -- A Notes： 1:Repetitiverating,pulsewidthlimitedbymaximumjunctiontemperature. 2:SurfacemountedonFR4Board,t≤10sec. 3:Pulsewidth≤ 300μs,dutycycle≤2%. 4:Guaranteedbydesign,notsubjecttoproduction. 5.L=10mH,ID=7.1A,VDD=50V,VGATE=650V,StartTJ=25℃. 6.ISD=4A,di/dt≤100A/μs,VDD≤BVDSS,StartTJ=25℃.

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5 Typical characteristics diagrams

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5 Typical characteristics diagrams(continues)

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6 Typical Test Circuit and Waveform

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6 Typical Test Circuit and Waveform(continues)

7 Product Names Rules

With2Digital,ForExample: 60onbehalfof600V, 06onbehalfof60v SpecialFunctionCode Eonbehalfofbuild-inESD NothingonbehalfofnotESD Packaging Code 220F: F 220: Nothing 251: B 252: D 262: I 263: E RatedCurrentCode With1-2Digital, ForExample: 4onbehalfof4A, 10onbehalfof10A, 08onbehalfof0.8A ChannelPolarityCode NonbehalfofNchannel PonbehalfofPchannel FXXNEXX

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8 Product Specifications and Packaging Models

ProductModel PackageType Mark Name RoHS Package Quantity 4N60 TO-220C 4N60 Pb-free Tube 1000/box F4N60 TO-220F F4N60 Pb-free Tube 1000/box B4N60 TO-251 B4N60 Pb-free Tube 1000/box D4N60 TO-252 D4N60 Pb-free Tape ＆ Reel 2500/box I4N60 TO-262 I4N60 Pb-free Tube 1000/box E4N60 TO-263 E4N60 Pb-free Tape ＆ Reel 800/box

9 Dimensions

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9 Dimensions(continues)

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10 Attentions

 ROUM SemiconductorTechnology CO.,LTD.reserves theright tochangethe specificationwithout prior notice!Thecustomershould obtainthe latestversionofthe informationbefore makingthe orderandverify thatthe informationiscomplete and up todate.  Itis the responsibility ofthe purchaserforany failure orfailure ofany semiconductorproduct under certain conditions.Itisthe responsibilityofthe purchasertocomply with safetystandards andto take safety measuresin the system designandmachinemanufacturing of Romaproducts in order to avoidpotentialrisk offailure.Injuryorpropertydamage.  Productpromotion isendless,ourcompany willbe dedicated toprovidecustomerswith better products.

11 Appendix

Revision history: Date REV. Description Page 2017.05.14 1.0 Original