2SB1367 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367
DESCRIPTION
- With TO-220F package
- Complement to type 2SD2059
- Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A
- Collector power dissipation: PC=30W(TC=25)
APPLICATIONS
- With general purpose applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IB Base current -0.5 A PC Collector dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA ;IB=0 -100 V VCEsat Collector-emitter saturation voltage I C=-4A ;IB=-0.4A -2.0 V VBE Base-emitter on voltage I C=-4A;VCE=-5V -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -1.0 mA hFE-1 DC current gain I C=-1A ; VCE=-5V 40 240 hFE-2 DC current gain I C=-4A ; VCE=-5V 20 fT Transition frequency I C=-1A ; VCE=-5V 5.0 MHz COB Collector output capacitance f=1MHz;V CB=-10V 270 pF hFE-1 Classifications R O Y 40-80 70-140 120-240
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367 PACKAGE OUTLINE Fig.2 Outline dimensions
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367