MTB12N03Q8 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Dynamic dv/dt rating
  • Repetitive Avalanche Rated
  • Pb-free Lead Plating and Halogen-free package Symbol Outline MTB12N03Q8 SOP-8 Pin 1 G:Gate D:Drain S:Source

CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 2/8 MTB12N03Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C 12 Continuous Drain Current @ TC=100°C ID 10 Pulsed Drain Current IDM 48 *1 Avalanche Current IAS 12 A Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω EAS 7.2 Repetitive Avalanche Energy @ L=0.05mH EAR 3.6 *2 mJ TA=25℃ 3 *3 Total Power Dissipation TA=100℃ PD 1.5 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=25V N-CH Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=250μA VGS(th) 1 1.7 3 V VDS = VGS, ID=250μA GFS *1 - 15 - S VDS =5V , ID=12A IGSS - - ±100 nA VGS=±20 - - 1 VDS =24V , VGS =0 IDSS - - 25 μA VDS =20V , VGS =0, TJ=125°C ID(ON) *1 12 - - A VDS =5V , VGS =10V - 9.7 11.5 mΩ VGS =10V , ID=12A RDS(ON) *1 - 14.5 18 mΩ VGS =4.5V , ID=10A Dynamic Ciss - 1060 - Coss - 190 - Crss - 145 - pF VGS=0V , VDS=15V , f=1MHz

CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 3/8 MTB12N03Q8 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qgs *1, 2 - 1.2 - Qgd *1, 2 - 3.7 - nC VDS=15V , VGS=10V , ID=12A td(ON) *1, 2 - 8 - tr *1, 2 - 6 - td(OFF) *1, 2 - 24 - tf *1, 2 - 3 - ns VDS=15V , ID=1A, VGS=10V , RGS=2.7Ω Rg - 2 - Ω VGS=15mV , VDS=0V , f=1MHz Source-Drain Diode IS *1 - - 2.5 ISM *3 - - 10 A VSD *1 - - 1.2 V IF=IS, VGS=0V trr - 18 - ns Qrr - 10 - nC IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.

Ordering Information

Device Package Shipping Marking MTB12N03Q8 SOP-8 (Pb-free & Halogen-free package) 2500 pcs / Tape & Reel B12N03

CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 4/8 MTB12N03Q8 CYStek Product Specification Characteristic Curves

CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 5/8 MTB12N03Q8 CYStek Product Specification Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 6/8 MTB12N03Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 7/8 MTB12N03Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 8/8 MTB12N03Q8 CYStek Product Specification SOP-8 Dimension *: Typical Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A Date Code Device Name H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.