B1274

2SB1274 FOSHAN | Alldatasheet

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Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package. 击穿电压高，饱和压降低，安全工作区宽。 High VCEO, low saturation voltage, wide ASO. 用于低频功率放大。 Low frequency power amplifier applications. PIN1：Base PIN 2 ：Collector PIN 3 ：Emitter 放大及印章代码 / h FE Classifications & Marking 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g hFE Classifications Symbol Q R S hFE Range 70～140 100 ～200 140 ～280 3 2 1

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage V CEO -60 V Emitter to Base Voltage V EBO -6.0 V Collector Current - Continuous I C -3.0 A Collector Current – Continuous(Pulse) I CP -8.0 A Collector Power Dissipation P C 2.0 W Collector Power Dissipation P C(TC=25 )℃ 25 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=-1.0mA I E=0 -60 V Collector to Base Breakdown Voltage VCEO I C=-5.0mA I B=0 -60 V Emitter to Base Breakdown Voltage V EBO I E=-1.0mA I C=0 -6.0 V Collector Cut-Off Current I CBO VCB=-40V I E=0 -100 μA Emitter Cut-Off Current I EBO VEB=-4.0V I C=0 -100 μA DC Current Gain hFE(1) VCE=-5.0V I C=-0.5A 70 280 hFE(2) V CE=-5.0V I C=-3.0A 20 Collector to Emitter Saturation Voltage VCE(sat) IC=-3.0A I B=-0.3A -0.4 -1.0 V Base to Emitter Voltage V BE V CE=-5.0V I C=-0.5A -0.8 -1.0 V Transition Frequency f T VCE=-5.0V I C=-0.5A 100 MHz Collector output capacitance C ob VCB=-10V f=1.0MHz 60 pF 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： B1274：  为型号代码 Q :  为 h FE 分档代码 Note: BR:   Company Code. B1274: Product Type. Q: h FE Classifications Symbol **:  Lot No. Code, code change with Lot No. BR ** B1274 Q

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-220/F 200 10 2,000 5 10,000 135×190 237×172×102 560×245×195 套管包装 / T U B E Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 TO-220/F 50 20 1,000 5 5,000 532×31.4×5.5 555×164×50 575×290×180 使用说明 / N o t i c e s