B12-28 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV.A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS BVCBO IC = 200 mA 60 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 250 µµµµA hFE VCE = 5.0 V IC = 500 mA 20 200 --- Cob VCB = 30 V f = 1.0 MHz 30 pF PG ηηηηc VCC = 28 V P OUT = 12 W f = 175 MHz 10.8 dB NPN SILICON RF POWER TRANSISTOR B12-28 DESCRIPTION: The B12-28 is Designed for Class C Power Amplifier Applications up to 250 MHz. FEATURES:
- PG = 13 dB Typical at 12 W/175 MHz
- ∞∞∞∞ Load VSWR at Rated Conditions
- Omnigold™ Metallization System MAXIMUM RATINGS IC 3.0 A VCB 60 V PDISS 27 W @ TC = 25 O C TJ -55 O C to +200 O C TSTG -55 O C to +150 O C θθθθJC 6.5 O C/W PACKAGE STYLE .380" 4L STUD ORDER CODE: ASI10801 MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A C B EE