2SB1186 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1186
DESCRIPTION
- With TO-220Fa package
- Low collector saturation votlage
- Complement to type 2SD1763
- High breakdown voltage
APPLICATIONS
- For use in low frequency power amplifer applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A Ta=25 2.0 PC Collector power dissipation TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1186 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-1A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage I C=-1A ;IB=-0.1A -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -1.0 µA IEBO Emitter cut-off current V EB=-4V; IC=0 -1.0 µA hFE DC current gain I C=-0.1A ; VCE=-5V 100 320 fT Transition frequency I C=-0.1A; VCE=-5V 50 MHz COB Collector output capacitance I E=0;f=1MHz ; VCB=-10V 30 pF hFE Classifications E F 100-200 160-320
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1186 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)