2SB1185 TEL | Alldatasheet
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Technical content
TO-220 Plastic-Encapsulated Transistors 2SB1185 TRANSISTOR (PNP)
FEATURES
P CM: 2 W ( T a m b = 2 5℃) Collector current I CM: - 3 A Collector-base voltage V (BR)CBO: - 6 0 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 5 V Collector cut-off current ICBO VCB=-40V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA DC current gain hFE(1) VCE=-3V, IC=-0.5A 60 320 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-0.2A -1 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB=-0.2A -1.5 V Transition frequency fT V CE=-5V, IC=-0.5A, f=30MHz 70 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 50 pF CLASSIFICATION OF h FE(1) Rank D E F Range 60-120 100-200 160-320 Marking 1 2 3 TO-220 1. BASE 2. COLLECTOR 3. EMITTER Transys Electronics LI M ITE D