2SB1098 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1098
DESCRIPTION
- With TO-220F package
- Complement to type 2SD1589
- DARLINGTON
- High DC current gain
APPLICATIONS
- Low speed switching industrial use
- Low frequency power amplifier PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -8 A IB Base current -0.5 A Ta=25 2 PC Collector dissipation TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1098 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=-3A; IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage I C=-3A; IB=-3mA -2.0 V ICBO Collector cut-off current V CB=-100V ;IE=0 -1 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -3 mA hFE-1 DC current gain I C=-3A ; VCE=-2V 2000 15000 hFE-2 DC current gain I C=-5A ; VCE=-2V 500 Switching times ton Turn-on time 0.5 µs ts Storage time 1 µs tf Fall time IC=-3A ;IB1=-IB2=-3mA RL=17>;VCC=-50V; 1 µs hFE-1 Classifications R O Y 2000-5000 3000-7000 5000-15000
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1098 PACKAGE OUTLINE Fig.2 Outline dimensions