AY08A3 POWEREX | Alldatasheet
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Technical content
0.8 Amperes/400-700 Volts
AY08A3- AY08A4- Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: M Planar Passivation M Surface Mount Type M Multiple Circuits in one Package Applications: M Electric Fan M Air Cleaner M Small Motor Control Ordering Information: Example: Select the complete part number from the table below -i.e. AY08A4-14 is a
0.8 Ampere, 4 Circuit, 700V,
16-Pin Multiple Circuit Triac. Number Voltage Type of Circuits (x 50) AY08A 3 -8 4 -12 -14 Dimension Inches Millimeters A 1.8 Max. 4.5 Max. E 0.3 7.62 F 0.12 Min. 3.0 Min. Dimension Inches Millimeters G 0.1 2.54 J 0.02 0.5 ±0.1 L 0.02 Min. 0.51 Min. M 0.13 3.3 A 916 SEATING PLANE N ∞ D E B C L M K J HG F 1 8 T2 T2 T2 T2 T2 T2 T2 T2 T1 GT 1 GT 1 GT 1 G AY08A3-**: No chip
AY08A3- AY08A4- 16-Pin Multiple Circuit Triac Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings (for One Chip), Tj = 25°C unless otherwise specified Characteristics Symbol AY08A*-08 AY08A*-12 AY08A*-14 Units Repetitive Peak Off-state Voltage, Gate Open VDRM 400 600 700 Volts Non-Repetitive Peak Off-state Voltage, Gate Open VDSM 500 720 840 Volts On-state Current, Tc = 86°CI T(RMS) 0.8 0.8 0.8 Amperes Non-repetitive Peak Surge, One Cycle (60Hz) I TSM 8 8 8 Amperes I2t for Fusing, t = 8.3 msec I 2t 0.26 0.26 0.26 A 2sec Peak Gate Power Dissipation, 20 msec P GM 1 1 1 Watts Average Gate Power Dissipation P G(avg) 0.1 0.1 0.1 Watts Peak Gate Current I GM 0.8 0.8 0.8 Amperes Peak Gate Voltage V GM 6 6 6 Volts Storage Temperature T stg -40 to 125 -40 to 125 -40 to 125 °C Operating Temperature T j -40 to 125 -40 to 125 -40 to 125 °C Electrical and Thermal Characteristics (for One Chip), Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Off-state Current, Peak I DRM VDRM applied, Tj = 125°C – – 1.0 mA Peak On-state Voltage V TM Tc = 25°C, ITM = 1.2A – – 2.0 Volts Thermal Resistance Junction to Ambient R th(j-a) – – – 120 °C/Watt Gate — Parameters Gate Current to Trigger II I RGT IT j = 25°C, VD = 6V – – 5.0 mA Gate Current to Trigger III I RGT III R L = 6V, RG = 330V – – 5.0 mA Gate Voltage to Trigger II V RGT IT j = 25°C, VD = 6V – – 2.0 Volts Gate Voltage to Trigger III V RGT III R L = 6V, RG = 330V – – 2.0 Volts Non-triggering Gate Voltage V GD Tj = 125°C, VD = 1/2 VDRM 0.1 – – Volts Critical Rate-of-Rise of Commutating (dv/dt)c Tj = 125°C 0.5 V/ µs Off-state Voltage (dv/dt) c = -0.4A/ms, VD = 400V