AVD250 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS T C = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 10 mA 65 V BV CER IC = 25 mA R BE = 10 Ω 65 V BV EBO IE = 1 mA 3.5 V ICES V CE = 50 V 25 mA h FE V CE = 5.0 V I C = 1.0 A 15 120 --- P G ηηC V CC = 50 V P OUT = 250 W f = 1025 - 1150 MHz 6.2 dB NPN SILICON RF POWER TRANSISTOR AVD250 DESCRIPTION: The ASI AVD250 is Designed for FEATURES:
- Input Matching Network
- Omnigold ™ Metalization System MAXIMUM RATINGS IC 17.8 A V CC 55 V P DISS 600 W @ T C ≤ 80 O C T J - 65 O C to +250 O C T STG - 65 O C to +200 O C θθJC 0.2 O C/W PACKAGE STYL E .400 2NL FLG ORDER CODE: ASI10565 MINIMUM inches / mm .100 / 2.54 .110 / 2.79 .376 / 9.55 .395 / 10.03 B C D E F G A MAXIMUM .396 / 10.06 .407 / 10.34 .130 / 3.30 inches / mm .450 / 11.43 H DIM K L I J .640 / 16.26 .890 / 22.61 .004 / 0.10 .660 / 16.76 .910 / 23.11 .007 / 0.18 H F C E N ØD M G 4x .062 x 45° P L K I J 2X B .025 x 45° A N M .193 / 4.90 .125 / 3.18 .395 / 10.03 .415 / 10.54 P .230 / 5.84