AVD05S ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 1.0 mA 50 V BV CEO IC = 5.0 mA 20 V BV EBO IE = 1.0 mA 3.5 V ICES VCE = 28 V 1.0 mA hFE VCE = 5.0 V IC = 100 mA 15 120 --- PG VCC = 12.5 V POUT = 0.5 W f = 1025 - 1150 MHz 10 dB NPN SILICON RF POWER TRANSISTOR AVD0.5S DESCRIPTION: The ASI AVD0.5S is Designed for Class A, DME/TACAN Applications up to 1150 MHz. FEATURES:

  • Class A Operation
  • PG = 10 dB at 0.5 W/1150 MHz
  • Omnigold ™ Metalization System MAXIMUM RATINGS IC 300 mA VCE 20 V PDISS --- W TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 35.0 O C/W PACKAGE STYLE .280 4L STUD MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J C B EE