AV945LT1 AVICTEK | Alldatasheet

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Technical content

1.9 0.95 0.95 1.0 2.4 1.3 0.4 2.9 AV945LT1 TRANSISTOR（ NPN ）

FEATURES

P CM : 0.2 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V(BR)CBO : 60 V Oper ating and storage junction temperature range T J，Tstg: -55℃ to +150 ELECTRICAL CHARACTERISTICS （Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA， IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA， IB=0 50 V Collector-emitter breakdown voltage V(BR)EBO Ic= 100μA， IB=0 5 V Collector cut-off current I CBO VCB=60 V , I E=0 0.1 μA Collector cut-off current I CEO VCB=45 V , I E=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA hFE(1) VCE= 6V, I C= 1mA 130 400 DC current gain hFE(2) VCE= 6V, I C= 0.1mA 40 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 10mA 1 V Base-emitter voltage V BEF IE= 310m A 1.4 V Transition frequency f T VCE=6V, I C= 10mA f=30MHz

150 MHz

CLASSIFICATION OF hFE(1) Rank L H Range 130-200 200-400 MARKING CR Unit : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR

SOT-23 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L θ Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 Dimensions In Millimeters Dimensions In Inches 0.037TPY 0.022REF 0.950TPY 0.550REF D A E L b C 0.2 e θ