AV1959 AVICTEK | Alldatasheet
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@vic AV1959 Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com TO-92 Plastic-Encapsulate Transistors AV1959 TRANSISTOR（ NPN ）
FEATURES
PCM : 0.5 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V (BR)CBO : 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ Tj : 150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA， IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μA， IC=0 5 V Collector cut-off current ICBO V CB=35 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5 V， IC=0 0.1 μA HFE(1) V CE=1V, IC=0 70 400 DC current gain HFE(2) V CE= 6V, IC= 400mA 25 Collector-emitter saturation voltage VCE(sat) I C= 100mA, IB=10mA 0.25 V Base-emitter voltage VBE V CE=1V, IC=100mA 1.0 V Transition frequency fT VCE= 6 V, IC= 20mA 200 MHz CLASSIFICATION OF H FE Rank O Y GR HFE(1) 70-140 120-240 200-400 Range HFE(2) 25(min) 40(min) 1 2 3 TO—92 1. EMITTER COLLECTOR 3.BSAE
@vic AV1959 Copyright © Avic Electronics Corp. 2 Website: http://www.avictek.com
@vic AV1959 Copyright © Avic Electronics Corp. 3 Website: http://www.avictek.com