AV9012 AVICTEK | Alldatasheet
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@vic AV9012 Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com TO-92 Plastic-Encapsulate Transistors AV9012 TRANSISTOR（ PNP ）
FEATURES
PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V (BR)CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA， IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0. 1 mA， IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA， IC=0 -5 V Collector cut-off current ICBO V CB=-40 V IE=0 -0.1 μA Collector cut-off current ICEO V CE=- 20 V IB=0 -0.2 μA Emitter cut-off current IEBO VEB= - 5 V， IC=0 -0.1 μA HFE（1） VCE= -1 V, IC= -50 mA 64 300 DC current gain HFE（2） VCE= -1V, IC =-500 mA 40 Collector-emitter saturation voltage VCE(sat) I C=-500 mA, IB=-50 mA -0.6 V Base-emitter saturation voltage VBE(sat) I C=-500mA,IB=-50 mA -1.2 V Base-emitter voltage VEB I E=-100mA -1.4 V Transition frequency fT VCE=- 6 V, IC= -20 mA f =30MHz
150 MHz
CLASSIFICATION OF HFE(1) Rank D E F G H I Range 64-91 78-112 96-135 112-166 144-202 190-300 1 2 3 TO—92 1. EMITTER 2. BASE 3.COLLECTOR