AV5401 AVICTEK | Alldatasheet

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Technical content

@vic AV5401 PNP EPITAXIAL SILICON TRANSISTOR QW-R201-001,A HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES

*Collector-Emitter Voltage: V CEO=-150V *Collector Dissipation: Pc(max)=625mW *High current gain

APPLICATIONS

*Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage V CBO -160 V Collector-emitter voltage V CEO -150 V Emitter-base voltage V EBO -5 V Collector dissipation Pc 625 mW Collector current Ic -600 mA Junction Temperature T j 150 °C Storage Temperature T STG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BV CBO Ic=-100µA,IE=0 -160 V Collector-emitter breakdown voltage BV CEO Ic=-1mA,I B=0 -150 V Emitter-base breakdown voltage BV EBO IE=-10µA,Ic=0 -6 V Collector cut-off current I CBO V CB=-120V,IE=0 -50 nA Emitter cut-off current I EBO V EB=-3V,Ic=0 -50 nA DC current gain(note) hFE1 hFE2 hFE3 VCE=-5V,Ic=-1mA VCE=-5V,Ic=-10mA VCE=-5V,Ic=-50mA 400 Collector-emitter saturation voltage V CE(sat) Ic=-10mA,I B=-1mA Ic=-50mA,IB=-5mA -0.2 -0.5 V Base-emitter saturation voltage V BE(sat) Ic=-10mA,I B=-1mA Ic=-50mA,IB=-5mA V Current gain bandwidth product f T V CE=-10V,Ic=-10mA,f=100MHz 100 400 MHz

QW-R201-001,A (continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Output capacitance Cob V CB=-10V,IE=0 f=1MHz 6.0 pF Noise Figure NF Ic=-0.25mA,V CE=-5V Rs=1kΩ,f=10Hz to 15.7kHz 8 dB Note: Pulse test: PW<300µs, Duty Cycle<2% CLASSIFICATION OF hFE RANK A B C RANGE 80-170 150-240 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.2 DC current Gain Ic,Collector current (mA) HFE, DC current Gain 102 101 100 103 VCE=-5V Fig.3 Base-Emitter on Voltage Ic,Collector current (mA) Base-Emitter voltage (V) VCE=-5V Saturation voltage (V) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.1 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB 103 Current Gain-bandwidth product,fT(MHz) 100 101 102 VCE=-10V Collector-Base voltage (V) Cob,Capacitance (pF) -100 f=1MHz IE=0 -10-1 -10-2 -101 -102 -101 -102 -103 -100 Ic,Collector current (mA) Ic,Collector current (mA) -100 -101 @vic AV5401 PNP EPITAXIAL SILICON TRANSISTOR