AV42LT1 AVICTEK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
1.9 0.95 0.95 2.9 0.4 1.3 2.4 1.0 AV42LT1 TRANSISTOR（ NPN ）
FEATURES
P CM : 0. 3 W（Tamb=25℃） Collector current I CM: 0.3 A Collector-base voltage V(BR)CBO : 300 V Oper ating and storage junction temperature range T J，Tstg: -55℃ to +150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 5 V Collector cut-off current ICBO VCB=200 V , I E=0 0.25 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA HFE（1） VCE= 10V, I C= 1mA 60 HFE（2） VCE= 10V, I C=10mA 100 200 DC current gain HFE（3） VCE=10V, I C=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB=2mA 0.9 V Transition frequency fT VCE= 20V, I C= 10mA f=30MHz
50 MHz
MMBTA42LT1=1D Un it : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR
SOT-23 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L θ Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 Dimensions In Millimeters Dimensions In Inches 0.037TPY 0.022REF 0.950TPY 0.550REF D A E L b C 0.2 e θ