AV2222 AVICTEK | Alldatasheet

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Copyright @vic Electronics Corp. 1 Website: http://www.avictek.com /C0065/C0109/C0112/C0108/C0105/C0102/C0105/C0101/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 75 Vdc Emitter–Base Voltage VEBO 6.5 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to AmbientR /C0113JA 200 °C/W Thermal Resistance, Junction to Case R /C0113JC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector–Base Breakdown Voltage (IC = 10 /C0109Adc, IE = 0) V(BR)CBO 75 — Vdc Emitter–Base Breakdown Voltage (IE = 10 /C0109Adc, IC = 0) V(BR)EBO 6.0 — Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX — 10 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) ICBO 0.01 µAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO — 10 nAdc Collector Cutoff Current (VCE = 10 V) ICEO — 10 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBEX — 20 nAdc AV2222@vic /C0050/C0078/C0050/C0050/C0050/C0050 TO–92 2 3 COLLECTOR BASE EMITTER

Copyright @vic Electronics Corp. 2 Website: http://www.avictek.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) hFE 100 300 Collector–Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) 0.3 1.0 Vdc Base–Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.6 1.2 2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C obo — 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C ibo — 25 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 0.25 8.0 1.25 kΩ Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 8.0 4.0 X 10–4 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 300 375 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 5.0 200 /C0109mhos Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb′C c — 150 ps Noise Figure (IC = 100 /C0109Adc, VCE = 10 Vdc, RS = 1.0 kΩ , f = 1.0 kHz) N F — 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 30 Vdc, VBE(off) = –2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) td — 10 ns Rise Time (VCC = 30 Vdc, VBE(off) = –2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr — 25 ns Storage Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) ts — 225 ns Fall Time IB1 = IB2 = 15 mAdc) (Figure 2) tf — 60 ns 1. Pulse Test: Pulse Width /C0118 300 /C0109s, Duty Cycle /C0118 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 11. “On” Voltages

0.2 V, VOLTAGE (VOL TS)

Figure 12. Temperature Coefficients