AV2001 AVICTEK | Alldatasheet
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@vic AV2001 TO-92 Plastic-Encapsulate Transistors AV2001 TRANSISTOR（NPN ）
FEATURES
P CM : 0.6 W （Tamb=25℃） Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 30 V Oper ating and storage junction temperature range T J，Tstg: -55℃ to +150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA ， I E=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , I B=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA， I C=0 5 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 µA Collector cut-off current ICEO VCE=20 V , IB=0 0.1 µA Emitter cut-off current I EBO VEB=5 V , IC=0 0.1 µA DC current gain hFE VCE=1V, IC=100m A 90 400 Collector-emitter saturation voltage VCE(sat) IC=700mA, IB= 70mA 0.6 V Base-emitter saturation voltage VBE(sat) IC= 700mA, IB=70mA 1.2 V Transition frequency f T VCE=6V, IC= 10mA f = 30MHz
50 MHz
Range 90-180 135-270 200-400 1 2 3 TO—92 1. EMITTER 2. COLLECTOR 3. BASE
D b E A C L e TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L Ö Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 Max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 Min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 Max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 Dimensions In Millimeters Dimensions In Inches 0.050TYP1.270TYP φ