AV13001 AVICTEK | Alldatasheet
Document overview
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Technical content
@vic AV13001 NPN EPITAXIAL SILICON TRANSISTOR QW-R201-055,A
FEATURES
- Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A TO-92 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Collector-base voltage V CBO 600 V Collector-emitter voltage V CEO 400 V Emitter-base voltage V EBO 7 V Collector current Ic 200 mA Collector power dissipation Pc 750 mW Junction Temperature T j 150 °C Storage Temperature T STG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Tc=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage V(BR) CBO IC=100µA, IE=0 600 V Collector-Emitter Breakdown Voltage V(BR)CEO Ic=1mA, IB=0 400 V Emitter-Base Breakdown Voltage V(BR) EBO IE=100µA, IC=0 7 V Collector Cut-off Current I CBO V CB=600V, IE=0 100 µA Collector Cut-off Current I CEO V CE=400V, IB=0 200 µA Emitter Cut-off Current I EBO V EB=7V, IC=0 100 µA hFE(1) V CE=20V, Ic=20mA 10 70 DC current gain hFE(2) V CE=10V, Ic=0.25mA 5 Collector-emitter saturation voltage V CE(sat) Ic=50mA, I B=10mA 0.5 V Base-emitter Saturation Voltage V BE(sat) Ic=50mA, I B=10mA 1.2 V Base-emitter Voltage V BE I E=100mA 1.1 V Transition Frequency f T V CE=20V, Ic=20mA, f=1MHz 8 MHz Fall Time t F 0.3 µs Storage Time t S Ic=50mA, IB1=-IB2=5mA, Vcc=45V 1.5 µs