AT41470 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8.0 V 200 Na IEBO VEB = 1.0 V 1.0 µA hFE VCE = 8.0 V IC = 10 mA 30 150 300 --- CCB VCB = 8.0 V f = 1.0 MHz 0.2 pF ft VCE = 8.0 V IC = 25 mA f = 1.0 GHz 8.0 GHz VCE = 8.0 V IC = 25 mA f = 2.0 GHz f = 4.0 GHz 12.0 6.5 dB P1dB VCE = 8.0 V IC = 25 mA f = 2.0 GHz f = 4.0 GHz 19.0 18.5 dBm G1dB VCE = 8.0 V IC = 25 mA f = 2.0 GHz f = 4.0 GHz 15.0 10.5 dB NFO VCE = 8.0 V IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz 1.3 1.6 3.0 1.9 dB NPN SILICON BIPOLAR TRANSISTOR AT41470 DESCRIPTION: The ASI AT41470 is a Common Emitter Device Designed for low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. MAXIMUM RATINGS IC 60 mA VCEO 12 V VCBO 20 V VEBO 1.5 V PDISS 500 mW @ TC = 25°C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C PACKAGE STYLE 1 = BASE 2 & 4 = EMITTER 3 = COLLECTOR