AT12020-21 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS VR IR = 10 µA 120 V VF IF = 1 mA 1.0 V IR VR = 100 V 100 µµµµA CT VR = 4 V f = 1.0 MHz 36 38 40 pF ∆∆∆∆CT CT0/ CT120 f = 1.0 MHz 10.0 --- Q VR = 4 V f = 50 MHz 300 --- RS IF = 10 mA f = 2400 MHz 0.9 ΩΩΩΩ SILICON ABRUPT VARACTOR DIODE AT12020-21 DESCRIPTION: The AT12020-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. FEATURES INCLUDE:

  • High Tuning Ratio, ∆∆∆∆CT = 10 MIN.
  • High Quality Factor, Q = 300 MIN.
  • Hermetic Package, CP = .20 pF L S = .42 nH MAXIMUM RATINGS IF 200 mA VR 120 V PDISS 1.75W @ TC 25 O C TJ -55 O C to +150 O C TSTG -55 O C to +150 O C θθθθJC 70 O C/W PACKAGE STYLE 21