ASX601

ASX601 ASB | Alldatasheet

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1/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 Features Description Absolute Maximum Ratings

• 16 dB Gain at 900 MHz ·32.7 dBm P1dB at 900 MHz ·49 dBm Output IP3 at 900 MHz ·MTTF > 100 Years ·Single Supply The ASX601, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication sys-tems up to 2.5 GHz. The amplifier is available in an SOT-89 packa ge and passes through the stringent DC, RF, and reliability tests. Application Circuit ·440 ~ 460 MHz ·715 ~ 725 MHz ·CDMA ·RFID (USA) ·GSM ·1400 ~ 1500 MHz ·PCS Typical Performance* Product Specifications* Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias

2/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Mounting Recommendation (in mm) Outline Drawing Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260°C reflow ESD Classification & Moisture Sensitivity Level ASX601 Pxxxx Lot No. Part No.

3/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT 440 ~ 460 MHz +5 V Frequency (MHz) 440~460 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -13 Magnitude S22 (dB) -18 Output P1dB (dBm) 34 Output IP31) (dBm) 47 Noise Figure (dB) 6.8 Device Voltage (V) 5 Current (mA) 850 2003004005006007000510152025 S21 [dB]Frequency [MHz]200300400500600700-20-15-10-505 S11 [dB]Frequency [MHz] 200300400500600700-30-25-20-15-10-50 S22 [dB]Frequency [MHz]0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=18 pFC4=22 pF L1=82 nH(Coil Inductor)L2=8.2 nHL3=3.9 nH2 mm

4/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +18 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT 715 ~ 725 MHz +5 V Frequency (MHz) 715~725 Magnitude S21 (dB) 18 Magnitude S11 (dB) -18 Magnitude S22 (dB) -15 Output P1dB (dBm) 34 Output IP31) (dBm) 46 Noise Figure (dB) 5.8 Device Voltage (V) 5 Current (mA) 850 500600700800900100005101520 S21 [dB]Frequency [MHz]5006007008009001000-30-25-20-15-10-505 S11 [dB]Frequency [MHz] 5006007008009001000-25-20-15-10-50 S22 [dB]Frequency [MHz]0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=12 pFC4=12 pF L1=82 nH(Coil Inductor)L2=3.3 nHL3=1.8 nH0.5 mm

5/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT CDMA Rx 824 ~ 849 MHz +5 V 500100015002000250030003500012345 Stability FactorFrequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S11 (dB) Frequency (MHz)60070080090010001100120005101520 Gain (dB) Frequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUT C5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=12 pF4.5 mm C4=8.2 pF L1=100 nH(Coil Inductor) 4.5 mm Frequency (MHz) 824~849 Magnitude S21 (dB) 17 Magnitude S11 (dB) -14 Magnitude S22 (dB) -18 Output P1dB (dBm) 33 Output IP31) (dBm) 48 Noise Figure (dB) 5.3 Device Voltage (V) 5 Current (mA) 850

6/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT CDMA Tx 869 ~ 894 MHz +5 V 500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUT C5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=10 pF4.5 mm C4=7.5 pF L1=100 nH(Coil Inductor) 4.5 mm Frequency (MHz) 869~894 Magnitude S21 (dB) 16.5 Magnitude S11 (dB) -17 Magnitude S22 (dB) -18 Output P1dB (dBm) 33 Output IP31) (dBm) 48 Noise Figure (dB) 5.6 Device Voltage (V) 5 Current (mA) 850 6007008009001000110012000510152025 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 600700800900100011001200-25-20-15-10-50 S11 (dB)Frequency (MHz) -40oc 25oc 85oc 600700800900100011001200-25-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc

7/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 880 MHz) Gain vs. Temperature -60-40-2002040608010050060070080090010001100 Current (m A )Tem perature (oC) -60-40-2002040608010010121416182022 Gain (dB)Tem perature (oC)Frequency = 880 MHz -60-40-2002040608010026283032343638 P1dB (dBm )Tem perature (oC)Frequency = 880 MHz131415161718192021222324252601020304050607080 Output IP3 (dBm )Pout per Tone (dBm ) -40oc 25oc 85oc

8/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT RFID(USA) 902 ~ 928 MHz +5 V C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUT C5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=10 pF4.5 mm C4=7.5 pF L1=100 nH(Coil Inductor) 4.5 mm Frequency (MHz) 902~928 Magnitude S21 (dB) 16 Magnitude S11 (dB) -18 Magnitude S22 (dB) -15 Output P1dB (dBm) 32.7 Output IP31) (dBm) 48 Noise Figure (dB) 5.5 Device Voltage (V) 5 Current (mA) 850 6007008009001000110012000510152025 Gain (dB)Frequency (MHz)600700800900100011001200-25-20-15-10-50 S11 (dB)Frequency (MHz) 600700800900100011001200-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)

9/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT GSM Rx 890 ~ 915 MHz +5 V C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUT C5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=10 pF4.5 mm C4=7.5 pF L1=100 nH(Coil Inductor) 4.5 mm Frequency (MHz) 890~915 Magnitude S21 (dB) 16 Magnitude S11 (dB) -18 Magnitude S22 (dB) -14 Output P1dB (dBm) 32.7 Output IP31) (dBm) 49 Noise Figure (dB) 5.6 Device Voltage (V) 5 Current (mA) 850 500100015002000250030003500012345 Stability FactorFrequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S11 (dB) Frequency (MHz)6007008009001000110012000510152025 Gain (dB) Frequency (MHz) 600700800900100011001200-25-20-15-10-50 S22 (dB) Frequency (MHz)

10/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT GSM Tx 935 ~ 960 MHz +5 V C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUT C5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=9 pF4.5 mm C4=9 pF L1=100 nH(Coil Inductor) 3.5 mm Frequency (MHz) 935~960 Magnitude S21 (dB) 16 Magnitude S11 (dB) -15 Magnitude S22 (dB) -12 Output P1dB (dBm) 34 Output IP31) (dBm) 49 Noise Figure (dB) 5.5 Device Voltage (V) 5 Current (mA) 850 600700800900100011001200-30-25-20-15-10-50 S11 (dB) Frequency (MHz)6007008009001000110012000510152025 Gain (dB) Frequency (MHz) 600700800900100011001200-25-20-15-10-50 S22 (dB) Frequency (MHz)500100015002000250030003500012345 Stability FactorFrequency (MHz)

11/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT 1400 ~ 1500 MHz +5 V C1=56 pFC2=56 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=5.6 pF1.5 mmC4=4 pF L1=47 nH(Coil Inductor)2.5 mm 120013001400150016001700180005101520 S21 [dB]Frequency [MHz]1200130014001500160017001800-30-25-20-15-10-50 S11 [dB]Frequency [MHz] 1200130014001500160017001800-30-25-20-15-10-50 S22 [dB]Frequency [MHz]0500100015002000250030003500012345 Stability FactorFrequency (MHz)

12/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT PCS Rx 1750 ~ 1780 MHz +5 V Frequency (MHz) 1750~1780 Magnitude S21 (dB) 11.2 Magnitude S11 (dB) -14 Magnitude S22 (dB) -15 Output P1dB (dBm) 30 Output IP31) (dBm) 47 Noise Figure (dB) 5.5 Device Voltage (V) 5 Current (mA) 850 500100015002000250030003500012345 Stability FactorFrequency (MHz) 150016001700180019002000-25-20-15-10-50 S11 (dB) Frequency (MHz)15001600170018001900200005101520 Gain (dB) Frequency (MHz) 150016001700180019002000-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=56 pF C2=56 pF Vcc=5 V RF IN RF OUT C5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=4 pF0.5 mmC4=3 pF L1=39 nH(Coil Inductor) 2 mm

13/13 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 December 2010 ASX601 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT PCS Tx 1840 ~ 1870 MHz +5 V Frequency (MHz) 1840~1870 Magnitude S21 (dB) 10.3 Magnitude S11 (dB) -16 Magnitude S22 (dB) -17 Output P1dB (dBm) 29.5 Output IP31) (dBm) 47 Noise Figure (dB) 5.7 Device Voltage (V) 5 Current (mA) 850 500100015002000250030003500012345 Stability FactorFrequency (MHz) 160017001800190020002100-30-25-20-15-10-50 S11 (dB) Frequency (MHz)16001700180019002000210005101520 Gain (dB) Frequency (MHz) 160017001800190020002100-30-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=56 pF C2=56 pF Vcc=5 V RF IN RF OUT C5=100pFC6=1 mF ASX601 D1=5.6VZener Diode C3=3.9 pFC4=2.7 pF L1=39 nH(Coil Inductor) 2 mm