ASX501

ASX501 ASB | Alldatasheet

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1/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 Features Description Absolute Maximum Ratings

• 18dB Gain at 900 MHz ·31.5 dBm P1dB at 900 MHz ·47 dBm Output IP3 at 900 MHz ·MTTF > 100 Years ·Single Supply The ASX501, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 2.5 GHz. The amplifier is available in an SOT-89 package and passes through the stringent DC, RF, and reliability tests. Application Circuit ·450 ~ 470 MHz ·LTE ·CDMA ·GSM ·PCS ·WCDMA ·908 ~ 923 MHz (balanced) Typical Performance Product Specifications* Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias

2/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Mounting Recommendation (in mm) Outline Drawing ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260°C reflow ESD Classification & Moisture Sensitivity Level ASX501 Pxxxx Lot No. Part No. Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side.

3/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 450~470 Magnitude S21 (dB) 20 Magnitude S11 (dB) -11 Magnitude S22 (dB) -12 Output P1dB (dBm) 31.5 Output IP31) (dBm) 45 Noise Figure (dB) 6.2 Device Voltage (V) 5 Current (mA) 560 450 ~ 470 MHz +5 V 3003504004505005506000510152025 Gain (dB) Frequency (MHz)300350400450500550600-15-10-505 S11 (dB) Frequency (MHz) 300350400450500550600-15-10-505 S22 (dB) Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=150 pFC2=150 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=15 pFC4=15 pF L1=86 nH(Coil Inductor)L2=10 nHL3=5.6 nH

4/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 698~787 Magnitude S21 (dB) 17.5 Magnitude S11 (dB) -9 Magnitude S22 (dB) -15 Output P1dB (dBm) 33 Output IP31) (dBm) 47 Noise Figure (dB) 4.8 Device Voltage (V) 5 Current (mA) 560 LTE 698 ~ 787 MHz +5 V 40050060070080090010000510152025 Gain (dB)Frequency (MHz)4005006007008009001000-20-15-10-50 S11 (dB)Frequency (MHz) 4005006007008009001000-25-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=9 pFC4=10 pF L1=100 nH(Coil Inductor)L2=4.7 nHL3=2.2 nH

5/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 824~849 Magnitude S21 (dB) 17.5 Magnitude S11 (dB) -13 Magnitude S22 (dB) -18 Output P1dB (dBm) 30.5 Output IP31) (dBm) 46 Noise Figure (dB) 4.6 Device Voltage (V) 5 Current (mA) 560 CDMA Rx 824 ~ 849 MHz +5 V 0500100015002000250030003500012345 Stability FactorFrequency (MHz) 600700800900100011001200-20-15-10-50 S11 (dB) Frequency (MHz)6007008009001000110012000510152025 Gain (dB) Frequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=12 pFC4=7 pF L1=100 nH(Coil Inductor)L2=2.7 nHL3=2.7 nH

6/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT CDMA Tx 869 ~ 894 MHz +5 V Frequency (MHz) 869~894 Magnitude S21 (dB) 17.5 Magnitude S11 (dB) -16 Magnitude S22 (dB) -16 Output P1dB (dBm) 31 Output IP31) (dBm) 46 Noise Figure (dB) 4.8 Device Voltage (V) 5 Current (mA) 560 500100015002000250030003500012345 Stability FactorFrequency (MHz) 60070080090010001100120005101520 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 600700800900100011001200-25-20-15-10-50 S11 (dB)Frequency (MHz) -40oc 25oc 85oc 600700800900100011001200-25-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=10 pFC4=6 pF L1=100 nH(Coil Inductor)L2=2.7 nHL3=2.7 nH

7/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 900 MHz) Gain vs. Temperature -60-40-20020406080100460480500520540560580600 Current (m A )Tem perature (oC) -60-40-20020406080100101214161820 Gain (dB)Tem perature (oC)Frequency = 900 MHz -60-40-20020406080100282930313233 P1dB (dBm )Tem perature (oC)Frequency = 900 MHz910111213141516171819202115202530354045505560 Output IP3 (dBm )Pout per Tone (dBm ) -40oc 25oc 85oc

8/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 890~915 Magnitude S21 (dB) 17.8 Magnitude S11 (dB) -16 Magnitude S22 (dB) -17 Output P1dB (dBm) 31.5 Output IP31) (dBm) 47 Noise Figure (dB) 4.7 Device Voltage (V) 5 Current (mA) 560 GSM Rx 890 ~ 915 MHz +5 V 600700800900100011001200-25-20-15-10-50 S11 (dB) Frequency (MHz)6007008009001000110012000510152025 Gain (dB) Frequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S22 (dB) Frequency (MHz)500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=10 pFC4=6 pF L1=100 nH(Coil Inductor)L2=2.2 nHL3=2.2 nH

9/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT GSM Tx 935 ~ 960 MHz +5 V Frequency (MHz) 935~960 Magnitude S21 (dB) 17.6 Magnitude S11 (dB) -18 Magnitude S22 (dB) -18 Output P1dB (dBm) 31.5 Output IP31) (dBm) 47 Noise Figure (dB) 4.5 Device Voltage (V) 5 Current (mA) 560 600700800900100011001200-30-25-20-15-10-50 S11 (dB) Frequency (MHz)6007008009001000110012000510152025 Gain (dB) Frequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S22 (dB) Frequency (MHz)500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=9 pFC4=6 pF L1=100 nH(Coil Inductor)L2=2.2 nHL3=2.2 nH

10/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1750~1780 Magnitude S21 (dB) 12 Magnitude S11 (dB) -16 Magnitude S22 (dB) -17 Output P1dB (dBm) 31 Output IP31) (dBm) 47 Noise Figure (dB) 4.6 Device Voltage (V) 5 Current (mA) 560 PCS Rx 1750 ~ 1780 MHz +5 V 500100015002000250030003500012345 Stability FactorFrequency (MHz) 150016001700180019002000-25-20-15-10-50 S11 (dB) Frequency (MHz)15001600170018001900200005101520 Gain (dB) Frequency (MHz) 150016001700180019002000-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=56 pFC2=56 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=4 pF1 mmC4=3 pF L1=39 nH(Coil Inductor)2.5 mm

11/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT PCS Tx 1840 ~ 1870 MHz +5 V Frequency (MHz) 1840~1870 Magnitude S21 (dB) 11.5 Magnitude S11 (dB) -16 Magnitude S22 (dB) -18 Output P1dB (dBm) 31 Output IP31) (dBm) 47 Noise Figure (dB) 4.6 Device Voltage (V) 5 Current (mA) 560 500100015002000250030003500012345 Stability FactorFrequency (MHz) 160017001800190020002100-25-20-15-10-50 S11 (dB) Frequency (MHz)16001700180019002000210005101520 Gain (dB) Frequency (MHz) 160017001800190020002100-30-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=56 pFC2=56 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX501 D1=5.6VZener Diode C3=3.9 pFC4=2.7 pF L1=39 nH(Coil Inductor)2.5 mm

12/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1920~1980 Magnitude S21 (dB) 11.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -13 Output P1dB (dBm) 31 Output IP31) (dBm) 47 Noise Figure (dB) 5.0 Device Voltage (V) 5 Current (mA) 560 WCDMA Rx 1920 ~ 1980 MHz +5 V C1=56 pFC2=1.2 pF Vcc=5 V RF IN RF OUTC4=100pFC5=1 mF ASX501 D1=5.6VZener Diode C3=3.3 pF L1=27 nH(Coil Inductor)4.5 mmL2=2.2 nH 17001800190020002100220005101520 Gain (dB)Frequency (MHz)170018001900200021002200-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 170018001900200021002200-25-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)

13/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT WCDMA Tx 2110 ~ 2170 MHz +5 V Frequency (MHz) 2110~2170 Magnitude S21 (dB) 9 Magnitude S11 (dB) -20 Magnitude S22 (dB) -6 Output P1dB (dBm) 31 Output IP31) (dBm) 47 Noise Figure (dB) 5.6 Device Voltage (V) 5 Current (mA) 560 C1=56 pFC2=1.2 pF Vcc=5 V RF IN RF OUTC4=100pFC5=1 mF ASX501 D1=5.6VZener Diode C3=2.7 pF L1=39 nH(Coil Inductor)4.5 mmL2=1.5 nH 19002000210022002300240005101520 Gain (dB)Frequency (MHz)190020002100220023002400-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 190020002100220023002400-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)

14/14 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2010 ASX501 250-2500 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +14 dBm/tone sepa-rated by 1 MHz. Board Layout (FR4, 59.5x39.5 mm2, 0.8T) Schematic S-parameters & K-factor P1dB of about 36 dBm solution 908 ~ 923 MHz +5 V *Coupler: Anaren, XC0900A-03S C2=100 pF Vcc=5 V C5=100pFC6=1 mFASX501 D1=5.6VZener Diode C3=10 pFC4=7.5 pFL1=100 nH(Coil Inductor)L2=2.7 nHRF OUTRF IN*CouplerR1=51 W *CouplerR2=51 W Vcc=5 VC11=100pF ASX501 D2=5.6VZener Diode C9=10 pFC10=7.5 pFL3=100 nH(Coil Inductor)L4=2.7 nHC8=100 pF C12=1 mF C1=100 pF C7=100 pF7 mm7 mm 7007508008509009501000105011000510152025 Gain (dB)Frequency (MHz)700750800850900950100010501100-50-40-30-20-100 S11 (dB)Frequency (MHz) 700750800850900950100010501100-50-40-30-20-100 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)