ASX401

ASX401 ASB | Alldatasheet

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1/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 Features Description Absolute Maximum Ratings

• 19.5 dB Gain at 900 MHz ·29.5 dBm P1dB at 900 MHz ·47 dBm Output IP3 at 900 MHz ·MTTF > 100 Years ·Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication sys-tems up to 3 GHz. The amplifier is available in an SOT-89 package and passes through the stringent DC, RF, and reliability tests. Application Circuit ·IF ( 128 ~ 152 MHz ) ·225 ~ 236 MHz ·440 ~ 460 MHz ·LTE ( 698 ~ 787 MHz ) ·776 ~ 901 MHz ·TRS ·CDMA ·GSM ·1200 ~ 1400 MHz ·1600 MHz ·PCS ·WCDMA ·WLAN ·WiMAX ·LTE ( 2300~ 2700MHz) ·1680 MHz ·1710 ~1785 MHz (Balanced) ·2050 ~ 2350 MHz (Balanced) Typical Performance* Product Specifications* Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias

2/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Mounting Recommendation (in mm) Outline Drawing Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260°C reflow ESD Classification & Moisture Sensitivity Level ASX401 Pxxxx Lot No. Part No.

3/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +8 dBm/tone sepa-rated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT IF 128 ~ 152 MHz +5 V 0501001502002503000510152025 Gain (dB)Frequency (MHz)050100150200250300-15-10-50 S11 (dB)Frequency (MHz) 050100150200250300-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=1 nFC2=1 nF Vs=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=15pFC4=56 pF L1=82 nH(Coil Inductor)L3=120nHL4=22 nHL2= 22nH

4/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. 0500100015002000250030003500012345 Stability FactorFrequency (MHz) 1001502002503003504000510152025 Gain (dB)Frequency (MHz)100150200250300350400-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 100150200250300350400-20-15-10-50 S22 (dB)Frequency (MHz) Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT 225 ~ 236 MHz +5 V Frequency (MHz) 225 ~ 236 Magnitude S21 (dB) 21.8 Magnitude S11 (dB) -12 Magnitude S22 (dB) -14 Output P1dB (dBm) 29.5 Output IP31) (dBm) 41.5 Noise Figure (dB) 8.4 Device Voltage (V) 5 Current (mA) 290 C1=12 pFC2=100 pF Vs=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=10 pFC4=27 pF L1=100 nH(Coil Inductor)L2=68 nHL3=15 nH

5/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +16 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT 440 ~ 460 MHz +5 V Frequency (MHz) 440 ~ 460 Magnitude S21 (dB) 22 Magnitude S11 (dB) -15 Magnitude S22 (dB) -16 Output P1dB (dBm) 30.5 Output IP31) (dBm) 45 Noise Figure (dB) 5.5 Device Voltage (V) 5 Current (mA) 290 2003004005006007000510152025 S21 [dB]Frequency [MHz]200300400500600700-30-25-20-15-10-50 S11 [dB]Frequency [MHz] 200300400500600700-30-25-20-15-10-50 S22 [dB]Frequency [MHz]0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=15 pFC4=12 pF L1=82 nH(Coil Inductor)L2=15 nHL3=6.8 nH

6/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT LTE 698 ~ 787 MHz +5 V Frequency (MHz) 698 ~ 787 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -9 Magnitude S22 (dB) -12 Output P1dB (dBm) 30 Output IP31) (dBm) 47 Noise Figure (dB) 4.4 Device Voltage (V) 5 Current (mA) 290 40050060070080090010000510152025 S21 [dB]Frequency [MHz]4005006007008009001000-25-20-15-10-50 S11 [dB]Frequency [MHz] 4005006007008009001000-20-15-10-50 S22 [dB]Frequency [MHz]0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=9 pFC4=6 pF L1=68 nH(Coil Inductor)L2=6.8 nHL3=3.3 nH

7/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. 0500100015002000250030003500012345 Stability FactorFrequency (MHz)60070080090010001100-20-15-10-50 S22 (dB)Frequency (MHz) 60070080090010001100-20-15-10-50 S11 (dB)Frequency (MHz)600700800900100011000510152025 Gain (dB)Frequency (MHz) Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT 776 ~ 901 MHz +5 V C1=100 pFC2=100 pF Vs=5 V RF IN RF OUTC6=100pFC7=1 mF ASX401 D1=5.6VZener Diode C3=5.6 pFC5=5.6 pF L1=100 nH(Coil Inductor)L3=3.3 nHL4=3.9 nHL2=3.3 nHC4=6 pF

8/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT TRS Rx 806 ~ 822 MHz +5 V Frequency (MHz) 806 ~ 822 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -14.5 Magnitude S22 (dB) -14.5 Output P1dB (dBm) 30 Output IP31) (dBm) 47 Noise Figure (dB) 4.5 Device Voltage (V) 5 Current (mA) 290 6007008009001000110012000510152025 Gain (dB) Frequency (MHz)600700800900100011001200-25-20-15-10-50 S11 (dB) Frequency (MHz) 600700800900100011001200-25-20-15-10-50 S22 (dB) Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFRF INASX401C3=9 pFL2=4.7 nH1 mmC2=100 pF Vcc=5 V RF OUTC5=100pFC6=1 mFD1=5.6VZener Diode C4=7 pF L1=82 nH(Coil Inductor)L3=3.3 nH

9/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +16 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT TRS Tx 851 ~ 867 MHz +5 V Frequency (MHz) 851 ~ 867 Magnitude S21 (dB) 19 Magnitude S11 (dB) -16 Magnitude S22 (dB) -14 Output P1dB (dBm) 30.5 Output IP31) (dBm) 43 Noise Figure (dB) 4.5 Device Voltage (V) 5 Current (mA) 290 6007008009001000110012000510152025 Gain (dB) Frequency (MHz)600700800900100011001200-20-15-10-50 S11 (dB) Frequency (MHz) 600700800900100011001200-25-20-15-10-50 S22 (dB) Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=9 pFC4=7 pF L1=82 nH(Coil Inductor)L2=4.7 nHL3=3.3 nH

10/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT CDMA Rx 824 ~ 849 MHz +5 V Frequency (MHz) 824 ~ 849 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -14 Output P1dB (dBm) 30 Output IP31) (dBm) 46 Noise Figure (dB) 4.4 Device Voltage (V) 5 Current (mA) 290 6007008009001000110012000510152025 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 600700800900100011001200-30-25-20-15-10-50 S11 (dB)Frequency (MHz) -40oc 25oc 85oc 600700800900100011001200-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc 0500100015002000250030003500012345 Stability FactorFrequency (MHz) -40oc 25oc 85oc C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=10 pFC4=4.7 pF L1=100 nH(Coil Inductor)L2=4.7 nHL3=3.3 nH

11/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 837MHz) P1dB vs. Temperature -60-40-20020406080100220240260280300320340 Current (m A )Tem perature (oC)Frequency = 837 MHz-60-40-20020406080100141618202224 Gain (dB)Tem perature (oC)Frequency = 837 MHz -60-40-2002040608010024262830323436 P1dB (dBm )Tem perature (oC)Frequency = 837 MHz78910111213141501020304050607080 Output IP3 (dBm )Pout per Tone (dBm ) -40oc 25oc 85oc

12/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT CDMA Tx 869 ~ 894 MHz +5 V Frequency (MHz) 869 ~ 894 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 29.5 Output IP31) (dBm) 47 Noise Figure (dB) 4.5 Device Voltage (V) 5 Current (mA) 290 6007008009001000110012000510152025 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 600700800900100011001200-30-25-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc 0500100015002000250030003500012345 Stability FactorFrequency (MHz) -40oc 25oc 85oc C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=9 pFC4=4.7 pF L1=100 nH(Coil Inductor)L2=3.9 nHL3=3.3 nH 600700800900100011001200-25-20-15-10-50 S11 (dB)Frequency (MHz) -40oc 25oc 85oc

13/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 880MHz) P1dB vs. Temperature -60-40-20020406080100220240260280300320340 Current (m A )Tem perature (oC)Frequency = 880 MHz-60-40-20020406080100141618202224 Gain (dB)Tem perature (oC)Frequency = 880 MHz -60-40-2002040608010024262830323436 P1dB (dBm )Tem perature (oC)Frequency = 880 MHz78910111213141501020304050607080 Output IP3 (dBm )Pout per Tone (dBm ) -40oc 25oc 85oc

14/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 890 ~ 915 Magnitude S21 (dB) 19.3 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 30 Output IP31) (dBm) 47 Noise Figure (dB) 4.4 Device Voltage (V) 5 Current (mA) 290 GSM Rx 890 ~ 915 MHz +5 V 600700800900100011001200-30-25-20-15-10-50 S22 (dB) Frequency (MHz)500100015002000250030003500012345 Stability FactorFrequency (MHz) 600700800900100011001200-25-20-15-10-50 S11 (dB) Frequency (MHz)6007008009001000110012000510152025 Gain (dB) Frequency (MHz) C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=9 pFC4=4.7 pF L1=100 nH(Coil Inductor)L2=3.9 nHL3=3.3 nH

15/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT GSM Tx 935 ~ 960 MHz +5 V 500100015002000250030003500012345 Stability FactorFrequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S11 (dB) Frequency (MHz)6007008009001000110012000510152025 Gain (dB) Frequency (MHz) 600700800900100011001200-30-25-20-15-10-50 S22 (dB) Frequency (MHz) Frequency (MHz) 935 ~ 960 Magnitude S21 (dB) 19 Magnitude S11 (dB) -17 Magnitude S22 (dB) -16 Output P1dB (dBm) 29.5 Output IP31) (dBm) 47 Noise Figure (dB) 4.3 Device Voltage (V) 5 Current (mA) 290 C1=100 pFC2=100 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=7.5 pFC4=4.7 pF L1=100 nH(Coil Inductor)L2=3.9 nHL3=3.3 nH

16/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. 0500100015002000250030003500012345 Stability FactorFrequency (MHz) 100011001200130014001500160005101520 Gain (dB)Frequency (MHz) 1000110012001300140015001600-30-25-20-15-10-50 S22 (dB)Frequency (MHz) 1000110012001300140015001600-20-15-10-50 S11 (dB)Frequency (MHz) Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT 1200 ~ 1400 MHz +5 V C1=100 pF C2=100 pF Vs=5 V RF IN RF OUTC5=100pFC6=1 mFASX401 D1=5.6V Zener Diode C3=5 pF C4=3.3 pFL1=47 nH(Coil Inductor)L2=2.2 nH

17/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1600 Magnitude S21 (dB) 15.5 Magnitude S11 (dB) -18 Magnitude S22 (dB) -14 Output P1dB (dBm) 29 Output IP31) (dBm) 47 Noise Figure (dB) 3.8 Device Voltage (V) 5 Current (mA) 290 1600 MHz +5 V 130014001500160017001800190005101520 Gain (dB)Frequency (MHz)1300140015001600170018001900-30-25-20-15-10-50 S11 (dB)Frequency (MHz) C1=56 pFC2=56 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=4 pF4 mmC4=2 pF L1=47 nH(Coil Inductor)4.5 mm 1300140015001600170018001900-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)

18/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT PCS Rx 1750 ~ 1780 MHz +5 V Frequency (MHz) 1750 ~ 1780 Magnitude S21 (dB) 14.7 Magnitude S11 (dB) -17 Magnitude S22 (dB) -18 Output P1dB (dBm) 29.5 Output IP31) (dBm) 46 Noise Figure (dB) 4.1 Device Voltage (V) 5 Current (mA) 290 500100015002000250030003500012345 Stability FactorFrequency (MHz) 150016001700180019002000-30-25-20-15-10-50 S11 (dB) Frequency (MHz)15001600170018001900200005101520 Gain (dB) Frequency (MHz) 150016001700180019002000-30-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=56 pFC2=56 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=3.9 pF2 mmC4=2.2 pF L1=39 nH(Coil Inductor)3.5 mm

19/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT PCS Tx 1840 ~ 1870 MHz +5 V Frequency (MHz) 1840 ~ 1870 Magnitude S21 (dB) 14 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 30 Output IP31) (dBm) 47 Noise Figure (dB) 4.1 Device Voltage (V) 5 Current (mA) 290 500100015002000250030003500012345 Stability FactorFrequency (MHz) 16001700180019002000210005101520 Gain (dB) Frequency (MHz)160017001800190020002100-30-25-20-15-10-50 S11 (dB) Frequency (MHz) 160017001800190020002100-30-25-20-15-10-50 S22 (dB) Frequency (MHz) C1=56 pFC2=56 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=3.3 pF2 mmC4=2.2 pF L1=39 nH(Coil Inductor)3.5 mm

20/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1920 ~ 1980 Magnitude S21 (dB) 13 Magnitude S11 (dB) -16 Magnitude S22 (dB) -17 Output P1dB (dBm) 28.5 Output IP31) (dBm) 47 Noise Figure (dB) 4.2 Device Voltage (V) 5 Current (mA) 290 WCDMA Rx 1920 ~ 1980 MHz +5 V 500100015002000250030003500012345 Stability FactorFrequency (MHz) 17001800190020002100220005101520 Gain (dB)Frequency (MHz) -30oc 25oc 85oc 170018001900200021002200-30-25-20-15-10-50 S11 (dB)Frequency (MHz) -30oc 25oc 85oc 170018001900200021002200-30-25-20-15-10-5 S22 (dB)Frequency (MHz) -30oc 25oc 85oc C1=68 pFC2=68 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=3.3 pF0.5 mmC4=1.8 pF L1=39 nH(Coil Inductor)3.5 mm

21/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 1950MHz)P1dB vs. Temperature 7891011121314151617181901020304050607080 Output IP3 (dBm )Pout per Tone (dBm ) -30oc 25oc 85oc -60-40-20020406080100220240260280300320340 Current (m A )Tem perature (oC)Frequency = 1950 MHz-60-40-2002040608010004812162024 Gain (dB)Tem perature (oC)Frequency = 1950 MHz -60-40-20020406080100242628303234 P1dB (dBm )Tem perature (oC)Frequency = 1950 MHz

22/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 WCDMA ACLR – 4FA WCDMA ACLR – 1FA CDMA ACPR – 1FA 1112131415161718192021222324-75-70-65-60-55-50-45-40 A CPR (dBc)Output Channel Power (dBm ) 111213141516171819-65-60-55-50-45-40 A CLR (dBc)Output Channel Power (dBm ) 11121314151617181920212223242526-75-70-65-60-55-50-45-40 A CLR (dBc)Output Channel Power (dBm ) WCDMA ACLR – 2FA 1112131415161718192021222324-65-60-55-50-45-40-35-30 A CLR (dBc)Output Channel Power (dBm )

23/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT WCDMA Tx 2110 ~ 2170 MHz +5 V Frequency (MHz) 2110 ~ 2170 Magnitude S21 (dB) 13 Magnitude S11 (dB) -16 Magnitude S22 (dB) -14 Output P1dB (dBm) 29 Output IP31) (dBm) 45 Noise Figure (dB) 4.3 Device Voltage (V) 5 Current (mA) 290 500100015002000250030003500012345 Stability FactorFrequency (MHz) 19002000210022002300240005101520 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 190020002100220023002400-25-20-15-10-50 S11 (dB)Frequency (MHz) -40oc 25oc 85oc 190020002100220023002400-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc C1=68 pFC2=68 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=2.7 pFC4=1.5 pF L1=39 nH(Coil Inductor)3.5 mm

24/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 2140MHz)P1dB vs. Temperature -60-40-20020406080100240260280300320340 Current (m A )Tem perature (oC)Frequency = 2140 MHz-60-40-2002040608010081012141618 Gain (dB)Tem perature (oC)Frequency = 2140 MHz -60-40-20020406080100242628303234 P1dB (dBm )Tem perature (oC)Frequency = 2140 MHz101112131415161718192021202530354045505560 Output IP3 (dBm )Pout per Tone (dBm ) -40oc 25oc 85oc

25/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 2400 ~ 2500 Magnitude S21 (dB) 11 Magnitude S11 (dB) -15 Magnitude S22 (dB) -16 Output P1dB (dBm) 29.5 Output IP31) (dBm) 46 Noise Figure (dB) 4.2 Device Voltage (V) 5 Current (mA) 290 WLAN 2400 ~ 2500 MHz +5 V 500100015002000250030003500012345 Stability FactorFrequency (MHz) 180020002200240026002800300005101520 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 1800200022002400260028003000-30-25-20-15-10-50 S11 (dB)Frequency (MHz) -40oc 25oc 85oc 1800200022002400260028003000-25-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc C1=68 pFC2=68 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=2.2 pFC4=1.5 pF L1=22 nH(Coil Inductor)2 mm

26/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 2450 MHz) Gain vs. Temperature -60-40-20020406080100240260280300320340 Current (m A )Tem perature (oC)Frequency = 2450 MHz-60-40-2002040608010004812162024 Gain (dB)Tem perature (oC)Frequency = 2450 MHz -60-40-200204060801002224262830323436 P1dB (dBm )Tem perature (oC)Frequency = 2450 MHz9101112131415161718192001020304050607080 Output IP3 (dBm )Pout per Tone (dBm ) -40oc 25oc 85oc

27/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 2500 ~ 2700 Magnitude S21 (dB) 10 Magnitude S11 (dB) -14 Magnitude S22 (dB) -18 Output P1dB (dBm) 30 Output IP31) (dBm) 46 Noise Figure (dB) 4.4 Device Voltage (V) 5 Current (mA) 290 WiMAX 2500 ~ 2700 MHz +5 V 200022002400260028003000320005101520 Gain (dB)Frequency (MHz)2000220024002600280030003200-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 2000220024002600280030003200-25-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=68 pFC2=68 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=1.8 pFC4=1.5 pF L1=22 nH(Coil Inductor)1.5 mm

28/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 2500 ~ 2700 Magnitude S21 (dB) 10 Magnitude S11 (dB) -12 Magnitude S22 (dB) -14 Output P1dB (dBm) 29 Output IP31) (dBm) 46 Noise Figure (dB) 4.4 Device Voltage (V) 5 Current (mA) 290 WiMAX 2500 ~ 2700 MHz Gain Flatness < 0.5 dB +5 V 0500100015002000250030003500012345 Stability FactorFrequency (MHz) 200022002400260028003000320005101520 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 2000220024002600280030003200-25-20-15-10-50 S11 (dB)Frequency (MHz) -40oc 25oc 85oc 2000220024002600280030003200-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc C1=68 pFC2=68 pF Vcc=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=1.5 pFC4=1.5 pF L1=22 nH(Coil Inductor)1.5 mm

29/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 2600 MHz) Gain vs. Temperature -60-40-20020406080100240260280300320340360 Current (m A )Tem perature (oC) -60-40-200204060801006810121416 Gain (dB)Tem perature (oC)Frequency = 2600 MHz -60-40-20020406080100242628303234 P1dB (dBm )Tem perature (oC)Frequency = 2600 MHz111213141516171830354045505560 Output IP3 (dBm )Pout per Tone (dBm ) -40oc 25oc 85oc

30/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. 2000 2200 2400 2600 2800 30000 G ain (dB) Frequency (MHz) 2000 2200 2400 2600 2800 3000-30 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 0 500 1000150020002500300035000 Stability Factor Frequency (MHz)2000 2200 2400 2600 2800 3000-30 -25 -20 -15 -10 S22 (dB) Frequency (M Hz) C1=68 pFC2=68 pF Vs=5 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=1.5 pFC4=1.5 pF L1=22 nH(Coil Inductor)1.5 mmR1=910 W Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor LTE 2300 ~ 2700 MHz Gain Flatness < 0.5 dB +5 V

31/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1680 Magnitude S21 (dB) 14.5 Magnitude S11 (dB) -20 Magnitude S22 (dB) -12 Output P1dB (dBm) 27 Output IP31) (dBm) 34 Noise Figure (dB) 2.6 Device Voltage (V) 3.9 Current (mA) 100 1680 MHz +3.9 V 14001500160017001800190005101520 Gain (dB)Frequency (MHz)140015001600170018001900-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 140015001600170018001900-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=56 pFC2=56 pF Vcc=3.9 V RF IN RF OUTC5=100pFC6=1 mF ASX401 D1=5.6VZener Diode C3=3.9 pF3 mmC4=2.2 pF L1=39 nH(Coil Inductor)3.5 mm

32/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone sepa-rated by 1 MHz. C2=56 pF Vs=5 V C5=100pFC6=1 mFASX401 D1=5.6VZener Diode C3=3.9 pFC4=2.2 pFL1=39 nH(Coil Inductor)RF OUTRF IN*CouplerR1=51 W R2=51 W Vs=5 VC11=100pF ASX401 D2=5.6VZener Diode L2=39 nH(CoilInductor) C12=1 mF C1=56 pF*Coupler2 mm C9=3.9 pF2 mmC7=56 pFC8=56 pFC10=2.2 pF 3.5 mm 3.5 mm 0 500 1000150020002500300035000 Stability Factor Frequency (MHz) 1500 1600 1700 1800 1900 20000 G ain (dB) Frequency (MHz) 1500 1600 1700 1800 1900 2000-40 -30 -20 -10 S22 (dB) Frequency (M Hz) 1500 1600 1700 1800 1900 2000-40 -30 -20 -10 S11 (dB) Frequency (MHz) Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1710 ~ 1785 Magnitude S21 (dB) 14 Magnitude S11 (dB) -20 Magnitude S22 (dB) -20 Output P1dB (dBm) 32 Output IP31) (dBm) 45.5 Noise Figure (dB) 5.2 Device Voltage (V) 5 Current (mA) 560 1710 ~ 1785 MHz +5 V *Coupler: RN2, RCP1850A03

33/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2012 ASX401 250-3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +12 dBm/tone sepa-rated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor 160018002000220024002600280005101520 Gain (dB)Frequency (MHz)1600180020002200240026002800-35-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 1600180020002200240026002800-30-25-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C2=68 pF Vcc=5 V C5=100pFC6=1 mFASX401 D1=5.6VZener Diode C3=2.7 pFC4=1.5 pFL1=27 nH(Coil Inductor)RF OUTRF IN*CouplerR1=51 W R2=51 W Vcc=5 VC11=100pF ASX401 D2=5.6VZener Diode L2=27 nH(Coil Inductor) C12=1 mF C1=68 pF*Coupler1.5 mm C9=2.7 pF1.5 mmC7=68 pFC8=68 pFC10=1.5 pF 4 mm 4 mm *Coupler: RN2, RCP2150A03