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1/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier (Supply Voltage = +5 V, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 2000 2450 3500 Gain dB 19.0 16.0 14.0 12.0 S11 dB -13 -15 -15 -14 S22 dB -13 -18 -18 -14 Output IP31) dBm 34.0 34.5 36.0 34.0 Noise Figure dB 4.0 3.3 3.3 3.2 Output P1dB dBm 20 21 22 20 Current mA 66 66 66 66 Device Voltage V +4.8 +4.8 +4.8 +4.8 1) OIP3 measured with two tones at an output power of +5 dBm/tone separated by 1 MHz Parameters Units Min Typ Max Testing Frequency MHz 2000 Gain dB 15.0 16.0 S11 dB -15 S22 dB -18 Output IP3 dBm 33.0 34.5 Noise Figure dB 3.3 3.5 Output P1dB dBm 20 21 Current mA 61 66 72 Device Voltage V +4.8 Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature +150 C Input RF Power (CW, 50 matched)1) +25 dBm Features Description Absolute Maximum Ratings 16 dB Gain at 2 GHz 21 dBm P1dB at 2 GHz 34.5 dBm Output IP3 at 2 GHz MTTF > 100 Years Single Supply The ASX201, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication sys- tems up to 5 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. Application Circuit IF (450 MHz) LTE CDMA GSM PCS WCDMA WiBro WLAN WiMAX C-Band (4500 MHz) Typical Performance Product Specifications ASX201 Pin Configuration Pin No. Function
1 RF IN
2 GND
3 RF OUT / Bias
2/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier Pin No. Function Mounting Recommendation (In mm) Outline Drawing Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification HBM Class 1B Voltage Level: 550 V MM Class A Voltage Level: 50 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow ESD Classification & Moisture Sensitivity Level Symbols Dimensions (In mm) MIN NOM MAX A 1.40 1.50 1.60 L 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 C 0.38 0.40 0.43 D 4.40 4.50 4.60 D1 1.40 1.60 1.75 E 3.64 --- 4.25 E1 2.40 2.50 2.60 e1 2.90 3.00 3.10 H 0.35 0.40 0.45 S 0.65 0.75 0.85 e 1.40 1.50 1.60 ASX201 Pxxxx Lot No. Part No.
3/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 450 Magnitude S21 (dB) 21.0 Magnitude S11 (dB) -18 Magnitude S22 (dB) -15 Output P1dB (dBm) 20.5 Output IP31) (dBm) 35 Noise Figure (dB) 5.5 Device Voltage (V) +4.8 Current (mA) 66 IF
450 MHz
+5 V L2=33 nH L1=82 nH C2=100 pFRF IN RF OUT ASX201 C3=4 pF Vcc=5 V C5=100pF C6=1 F D1=5.6V Zener Diode R1=3 C1=100 pF L3=6.8 nH C4=7 pF 200 300 400 500 600 700 Gain (dB) Frequency (MHz) 200 300 400 500 600 700 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 200 300 400 500 600 700 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz)
4/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 698 ~ 787 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -12 Magnitude S22 (dB) -10 Output P1dB (dBm) 20 Output IP31) (dBm) 33.5 Noise Figure (dB) 3.7 Device Voltage (V) +4.8 Current (mA) 66 LTE 698 ~ 787 MHz +5 V L2=12 nH L1=100 nH C2=100 pFRF IN RF OUT ASX201 C1=3.9 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3 400 500 600 700 800 900 1000 Gain (dB) Frequency (MHz) 400 500 600 700 800 900 1000 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 400 500 600 700 800 900 1000 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz)
5/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 824 ~ 849 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -18 Magnitude S22 (dB) -13 Output P1dB (dBm) 20 Output IP31) (dBm) 34 Noise Figure (dB) 4.0 Device Voltage (V) +4.8 Current (mA) 66 CDMA Rx 824 ~ 849 MHz +5 V 600 700 800 900 1000 1100 1200 Gain (dB) Frequency (MHz) 600 700 800 900 1000 1100 1200 -30 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 600 700 800 900 1000 1100 1200 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) L2=12 nH L1=100 nH C2=100 pFRF IN RF OUT ASX201 C1=5 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3
6/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 869 ~ 894 Magnitude S21 (dB) 19.5 Magnitude S11 (dB) -13 Magnitude S22 (dB) -13 Output P1dB (dBm) 20 Output IP31) (dBm) 34 Noise Figure (dB) 4.0 Device Voltage (V) +4.8 Current (mA) 66 CDMA Tx 869 ~ 894 MHz +5 V 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) L2=10 nH L1=100 nH C2=100 pFRF IN RF OUT ASX201 C1=5 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3 600 700 800 900 1000 1100 1200 Gain (dB) Frequency (MHz) -40 o c o c o c 600 700 800 900 1000 1100 1200 -20 -15 -10 S11 (dB) Frequency (MHz) -40 o c o c o c 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 S22 (dB) Frequency (MHz) -40 o c o c o c
7/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 900 MHz) Gain vs. Temperature -60 -40 -20 0 20 40 60 80 100 Current (mA) Temperature ( o -60 -40 -20 0 20 40 60 80 100 Gain (dB) Temperature ( o Frequency = 900 MHz -60 -40 -20 0 20 40 60 80 100 P1dB (dBm) Temperature ( o Frequency = 900 MHz - 1 0123456789 1 0 1 1 1 2 1 3 1 4 Output IP3 (dBm) Pout per Tone (dBm) -40 o c o c o c
8/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 890 ~ 960 Magnitude S21 (dB) 19.0 Magnitude S11 (dB) -13 Magnitude S22 (dB) -13 Output P1dB (dBm) 20 Output IP31) (dBm) 34 Noise Figure (dB) 4.0 Device Voltage (V) +4.8 Current (mA) 66 GSM 890 ~ 960 MHz +5 V L2=10 nH L1=100 nH C2=100 pFRF IN RF OUT ASX201 C1=4 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3 600 700 800 900 1000 1100 1200 Gain (dB) Frequency (MHz) 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 600 700 800 900 1000 1100 1200 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz)
9/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1750 ~ 1780 Magnitude S21 (dB) 16.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 20 Output IP31) (dBm) 34 Noise Figure (dB) 3.5 Device Voltage (V) +4.8 Current (mA) 66 PCS Rx 1750 ~ 1780 MHz +5 V 1500 1600 1700 1800 1900 2000 Gain (dB) Frequency (MHz) 1500 1600 1700 1800 1900 2000 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 1500 1600 1700 1800 1900 2000 -30 -25 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) L2=2.7 nH L1=39 nH C2=68 pFRF IN RF OUT ASX201 C1=2.7 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3
10/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1840 ~ 1870 Magnitude S21 (dB) 16.0 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 21 Output IP31) (dBm) 34.5 Noise Figure (dB) 3.5 Device Voltage (V) +4.8 Current (mA) 66 PCS Tx 1840 ~ 1870 MHz +5 V 1600 1700 1800 1900 2000 2100 Gain (dB) Frequency (MHz) 1600 1700 1800 1900 2000 2100 -30 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 1600 1700 1800 1900 2000 2100 -35 -30 -25 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) L2=2.7 nH L1=39 nH C2=68 pFRF IN RF OUT ASX201 C1=2.2 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3
11/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1920 ~ 1980 Magnitude S21 (dB) 16.0 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 21 Output IP31) (dBm) 34.5 Noise Figure (dB) 3.3 Device Voltage (V) +4.8 Current (mA) 66 WCDMA Rx 1920 ~ 1980 MHz +5 V 1700 1800 1900 2000 2100 2200 Gain (dB) Frequency (MHz) 1700 1800 1900 2000 2100 2200 -30 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 1700 1800 1900 2000 2100 2200 -40 -35 -30 -25 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) L2=2.2 nH L1=39 nH C2=68 pFRF IN RF OUT ASX201 C1=2.2 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3
12/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 2110 ~ 2170 Magnitude S21 (dB) 15.5 Magnitude S11 (dB) -17 Magnitude S22 (dB) -18 Output P1dB (dBm) 20.5 Output IP31) (dBm) 36 Noise Figure (dB) 3.3 Device Voltage (V) +4.8 Current (mA) 66 WCDMA Tx 2110 ~ 2170 MHz +5 V 1900 2000 2100 2200 2300 2400 Gain (dB) Frequency (MHz) 1900 2000 2100 2200 2300 2400 -30 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 1900 2000 2100 2200 2300 2400 -40 -35 -30 -25 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) L2=1.8 nH L1=39 nH C2=68 pFRF IN RF OUT ASX201 C1=2 pF Vcc=5 V C3=100pF C4=1 F D1=5.6V Zener Diode R1=3
13/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 2300 ~ 2400 Magnitude S21 (dB) 14.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 22 Output IP31) (dBm) 36 Noise Figure (dB) 3.3 Device Voltage (V) +4.8 Current (mA) 66 WiBro 2300 ~ 2400 MHz +5 V 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) 1800 2000 2200 2400 2600 2800 3000 Gain (dB) Frequency (MHz) 1800 2000 2200 2400 2600 2800 3000 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 1800 2000 2200 2400 2600 2800 3000 -35 -30 -25 -20 -15 -10 S22 (dB) Frequency (MHz) C1=56 pF L1=39 nH C2=56 pFRF IN RF OUT ASX201 C3=2 pF 4 mm Vcc=5 V C4=100pF C5=1 F D1=5.6V Zener Diode R1=3
14/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 2400 ~ 2500 Magnitude S21 (dB) 14.0 Magnitude S11 (dB) -15 Magnitude S22 (dB) -18 Output P1dB (dBm) 22 Output IP31) (dBm) 36 Noise Figure (dB) 3.3 Device Voltage (V) +4.8 Current (mA) 66 WLAN 2400 ~ 2500 MHz +5 V 1800 2000 2200 2400 2600 2800 3000 Gain (dB) Frequency (MHz) 1800 2000 2200 2400 2600 2800 3000 -30 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 1800 2000 2200 2400 2600 2800 3000 -30 -25 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) C1=56 pF L1=39 nH C2=56 pFRF IN RF OUT ASX201 C3=1.8 pF 4 mm Vcc=5 V C4=100pF C5=1 F D1=5.6V Zener Diode R1=3
15/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 2500 ~ 2700 Magnitude S21 (dB) 14.0 Magnitude S11 (dB) -14 Magnitude S22 (dB) -17 Output P1dB (dBm) 21 Output IP31) (dBm) 37.5 Noise Figure (dB) 2.9 Device Voltage (V) +4.8 Current (mA) 66 WiMAX 2500 ~ 2700 MHz +5 V 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) C1=56 pF L1=39 nH C2=56 pFRF IN RF OUT ASX201 C3=1.5 pF 3.5 mm Vcc=5 V C4=100pF C5=1 F D1=5.6V Zener Diode R1=3 2000 2200 2400 2600 2800 3000 3200 Gain (dB) Frequency (MHz) -40 o c o c o c 2000 2200 2400 2600 2800 3000 3200 -25 -20 -15 -10 S11 (dB) Frequency (MHz) -40 o c o c o c 2000 2200 2400 2600 2800 3000 3200 -25 -20 -15 -10 S22 (dB) Frequency (MHz) -40 o c o c o c
16/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 2600 MHz) Gain vs. Temperature -60 -40 -20 0 20 40 60 80 100 Current (mA) Temperature ( o -60 -40 -20 0 20 40 60 80 100 Gain (dB) Temperature ( o Frequency = 2600 MHz -60 -40 -20 0 20 40 60 80 100 P1dB (dBm) Temperature ( o Frequency = 2600 MHz 123456789 1 0 1 1 1 2 1 3 1 4 1 5 1 6 Output IP3 (dBm) Pout per Tone (dBm) -40 o c o c o c
17/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 0 2 4 6 8 10 12 Output Power (dBm) -70 -65 -60 -55 -50 -45 -40 ACLR (dBc)
20 MHz BW
10 MHz BW
1) Test Source : LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 2.6 GHz 2) Test Source : LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 2.6 GHz LTE ACLR – 10 MHz & 20 MHz LTE ACLR – 20 MHz
18/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 3400 ~ 3600 Magnitude S21 (dB) 12.0 Magnitude S11 (dB) -12 Magnitude S22 (dB) -13 Output P1dB (dBm) 20 Output IP31) (dBm) 35 Noise Figure (dB) 3.2 Device Voltage (V) +4.8 Current (mA) 66 WiMAX 3400 ~ 3600 MHz +5 V 0 500 1000 1500 2000 2500 3000 3500 4000 Stability Factor Frequency (MHz) 3000 3200 3400 3600 3800 4000 Gain (dB) Frequency (MHz) -40 o c o c o c 3000 3200 3400 3600 3800 4000 -25 -20 -15 -10 S11 (dB) Frequency (MHz) -40 o c o c o c 3000 3200 3400 3600 3800 4000 -25 -20 -15 -10 S22 (dB) Frequency (MHz) -40 o c o c o c C1=27 pF L1=22 nH C2=27 pFRF IN RF OUT ASX201 C3=0.75 pF Vcc=5 V C4=100pF C5=1 F D1=5.6V Zener Diode R1=3
19/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 3500 MHz) Gain vs. Temperature -60 -40 -20 0 20 40 60 80 100 Current (mA) Temperature ( o -60 -40 -20 0 20 40 60 80 100 Gain (dB) Temperature ( o Frequency = 3500 MHz -60 -40 -20 0 20 40 60 80 100 P1dB (dBm) Temperature ( o Frequency = 3500 MHz 123456789 1 0 1 1 1 2 1 3 1 4 Output IP3 (dBm) Pout per Tone (dBm) -40 o c o c o c
20/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier 4000 4200 4400 4600 4800 5000 Gain (dB) Frequency (MHz) 4000 4200 4400 4600 4800 5000 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 4000 4200 4400 4600 4800 5000 -25 -20 -15 -10 S22 (dB) Frequency (MHz) 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 4500 Magnitude S21 (dB) 8.9 Magnitude S11 (dB) -16 Magnitude S22 (dB) -13 Output P1dB (dBm) 21.5 Output IP31) (dBm) 37 Noise Figure (dB) 3.4 Device Voltage (V) +4.8 Current (mA) 68 C-Band
4500 MHz
+5 V
21/21 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 September 2013 ASX201 250 ~ 5000 MHz MMIC Amplifier Performance with varying VDEVICE VDEVICE (V) Current (mA) Freq. (MHz) Gain (dB) S11 (dB) S22 (dB) OIP31) (dBm) P1dB (dBm) NF (dB) +4.8 66 880 +4.8 66 1950 +4.8 66 3500 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.