ASX1436 ASB | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 20
Technical content
1/20 ASB Inc. sales@asb.co.kr January 2017 ASX1436 1. Product Overview
1.1 General Description
ASX1436 is a three-stage internally matched MMIC Power Amplifier which operates between 13.75 GHz and 14.50 GHz frequency range. This product is well suited for VSAT applications.
1.2 Features
Frequency Range: 13.75 – 14.50 GHz Saturated Output Power: 35 dBm Power Added Efficiency: 28 % Small Signal Gain: 31.5 dB Output Third Order Intercept Point: 41.5 dBm Bias: VDD = +7 V, IDD = 1300 mA, VGG = -0.8 V (Typical) 100% DC and RF tested
1.3 Applications
Ku Band VSAT Point to Point Radio
1.4 Package Profile & RoHS Compliance
10-lead Flange Package RoHS-compliant ASX1436 Data Sheet Ku Band Power Amplifier MMIC
2/20 ASB Inc. sales@asb.co.kr January 2017 ASX1436 2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 13.75 - 14.50 GHz -0.8 -0.5 V Output Power at Psat1) f = 13.75 - 14.50 GHz 34 35 dBm Power Gain at Psat1) f = 13.75 - 14.50 GHz 27 29 dB Drain Current at Psat1) f = 13.75 - 14.50 GHz 1550 1700 mA Power Added Efficiency at Psat1) f = 13.75 - 14.50 GHz 28 % Gain Flatness f = 13.75 - 14.50 GHz 1.5 2.0 dB Input Return Loss f = 13.75 - 14.50 GHz -10 -6 dB Output Return Loss f = 13.75 - 14.50 GHz -15 -8 dB Output TOI2) Δf = 10 MHz 2-Tone Test Output power / Tone = +26 dBm 41.5 dBm Supply Current VDD = +7 V 1300 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point
2.2 Product Specification
Test conditions : T = +25 C, VDD= +7 V, CW, VGG = -0.8 V typical, ZO = 50 Parameter Min Typ Max Unit Frequency 13.75 14.50 GHz Small Signal Gain 29.5 31.5 dB Input Return Loss -10 -6 dB Output Return Loss -15 -8 dB Supply Current 1300 mA
2.3 Absolute Maximum Ratings
Parameters Max. Ratings Operating Case Temperature (Tc) -40 to 85 C Storage Temperature (Tstg) -55 to 125 C Drain Voltage (VDD) +9 V Gate Voltage (VGG) -1.5 to -0.5 V Input RF Power (Pin) +18 dBm
3/20 ASB Inc. sales@asb.co.kr January 2017 ASX1436
2.4 Pin Descriptions
1,5 Vg Gate voltage
3 RF IN Input, matched to 50 ohms
6,10 Vd Drain voltage
8 RF OUT Output, matched to 50 ohms
2,4,7,9 NC No internal connection ( open or connected to GND )
4/20 ASB Inc. sales@asb.co.kr January 2017 ASX1436 3. Application 1: 13.75 – 14.50 GHz, VDD = +7V, IDD = 1300mA
3.1 Application Circuit
3.2 Biasing Procedure
Make sure no RF power is applied to the device before continuing. Pinch off device by setting VGG to -1.5 V. Raise VDD to +7 V while monitoring drain current. Raise VGG until drain current reaches 1300 mA. VGG should be between -1.5 and -0.5 V. Apply RF power. To improve the thermal and RF performance, ASB recommends a heat sink er attached to the bottom of the package with an Indium alloy preform. Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module.
5/20 ASB Inc. sales@asb.co.kr January 2017 ASX1436
3.3 Performance Table
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 13.75 - 14.50 GHz -0.8 -0.5 V Output Power at Psat1) f = 13.75 - 14.50 GHz 34 35 dBm Power Gain at Psat1) f = 13.75 - 14.50 GHz 27 29 dB Drain Current at Psat1) f = 13.75 - 14.50 GHz 1550 1700 mA Power Added Efficiency at Psat1) f = 13.75 - 14.50 GHz 28 % Gain Flatness f = 13.75 - 14.50 GHz 1.5 2.0 dB Input Return Loss f = 13.75 - 14.50 GHz -10 -6 dB Output Return Loss f = 13.75 - 14.50 GHz -15 -8 dB Output TOI2) Δf = 10 MHz 2-Tone Test Output power / Tone = +26 dBm 41.5 dBm Supply Current VDD = +7 V 1300 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point
6/20 ASB Inc. sales@asb.co.kr January 2017 ASX1436
3.4 Plots of Performances
12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Small Signal Gain (dB) 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) -40 -35 -30 -25 -20 -15 -10 Input / Output Return Loss (dB) Input Return Loss Output Return Loss Input / Output Return Loss vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm S-parameter Small Signal Gain vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
7/20 ASB Inc. sales@asb.co.kr January 2017 ASX1436 Frequency (GHz) Output Power (dBm) Pin = +5 dBm Pin = +0 dBm Pin = -5 dBm Pin = -10 dBm 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) Frequency (GHz) Power Added Efficiency (%) Pin = +5 dBm Pin = +0 dBm Pin = -5 dBm Pin = -10 dBm -15 -10 -5 0 5 10 15 Input Power (dBm) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 IDD (mA) Output Power vs. Frequency VDD = +7 V, IDD = 1300 mA Power Added Efficiency vs. Frequency VDD = +7 V, IDD = 1300 mA Output Power, IDD vs. Input Power VDD = +7 V, IDD = 1300 mA Output TOI vs. Output Power / Tone VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
8/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 -15 -10 -5 0 5 10 15 Input Power (dBm) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 IDD (mA) -15 -10 -5 0 5 10 15 Input Power (dBm) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 IDD (mA) -15 -10 -5 0 5 10 15 Input Power (dBm) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 IDD (mA) -15 -10 -5 0 5 10 15 Input Power (dBm) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 IDD (mA) VDD = +7 V, IDD = 1300 mA @ 14.00 GHz VDD = +7 V, IDD = 1300 mA @ 14.25 GHz VDD = +7 V, IDD = 1300 mA @ 14.50 GHz VDD = +7 V, IDD = 1300 mA @ 13.75 GHz Output Power, Drain Current vs. Input Power by Temperature
9/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 13.75 GHz Output TOI vs. Output Power / Tone by Temperature VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 14.00 GHz VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 14.25 GHz VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 14.50 GHz
10/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 -60 -40 -20 0 20 40 60 80 100 Temperature TOI (dBm) Frequency (GHz) Output Power (dBm) Output TOI vs. Temperature VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz Output power / Tone= +26 dBm Output Power vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = +5 dBm, CW
11/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 4. Application 2: 13.75 – 14.50 GHz, VDD = +7V, IDD = 1300mA
4.1 Application Circuit
In case of one VGG and one VDD bias applied.
4.2 Biasing Procedure
Make sure no RF power is applied to the device before continuing. Pinch off device by setting VGG to -1.5 V. Raise VDD to +7 V while monitoring drain current. Raise VGG until drain current reaches 1300 mA. VGG should be between -1.5 and -0.5 V. Apply RF power. To improve the ther mal and RF performance, ASB recommends a heat sink er attached to the bottom of the package with an Indium alloy preform. Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module. Case 1 Case 2 Case 3 Case 4
12/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436
4.3 Performance Table
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 13.75 - 14.50 GHz -0.8 -0.5 V Output Power at Psat1) f = 13.75 - 14.50 GHz 33 34 dBm Power Gain at Psat1) f = 13.75 - 14.50 GHz 27 29 dB Drain Current at Psat1) f = 13.75 - 14.50 GHz 1400 1600 mA Power Added Efficiency at Psat1) f = 13.75 - 14.50 GHz 25 % Gain Flatness f = 13.75 - 14.50 GHz 1.5 2.0 dB Input Return Loss f = 13.75 - 14.50 GHz -10 -6 dB Output Return Loss f = 13.75 - 14.50 GHz -12 -8 dB Output TOI2) Δf = 10 MHz 2-Tone Test Output power / Tone = +26 dBm 42 dBm Supply Current VDD = +7 V 1300 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point
13/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436
4.4 Plots of Performances
12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Small Signal Gain (dB) 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) -45 -40 -35 -30 -25 -20 -15 -10 Input / Output Return Loss (dB) Input Return Loss Output Return Loss Input / Output Return Loss vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm S-parameter Small Signal Gain vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
14/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 Frequency (GHz) Output Power (dBm) Pin = +5 dBm Pin = +0 dBm Pin = -5 dBm Pin = -10 dBm Frequency (GHz) Power Added Efficiency (%) Pin = +5 dBm Pin = +0 dBm Pin = -5 dBm Pin = -10 dBm -15 -10 -5 0 5 10 15 Input Power (dBm) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 IDD (mA) 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) Output Power vs. Frequency VDD = +7 V, IDD = 1300 mA Power Added Efficiency vs. Frequency VDD = +7 V, IDD = 1300 mA Output Power, IDD vs. Input Power VDD = +7 V, IDD = 1300 mA Output TOI vs. Output Power / Tone VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
15/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 5. Application 3: 13.75 – 14.50 GHz, VDD = +5V, IDD = 1300mA
5.1 Application Circuit
5.2 Biasing Procedure
Make sure no RF power is applied to the device before continuing. Pinch off device by setting VGG to -1.5 V. Raise VDD to +5 V while monitoring drain current. Raise VGG until drain current reaches 1300 mA. VGG should be between -1.5 and -0.5 V. Apply RF power. To improve the thermal and RF performance, ASB recommends a heat sink er attached to the bottom of the package with an Indium alloy preform. Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module.
16/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436
5.3 Performance Table
Test conditions : T = +25 C, VDD = +5 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 13.75 - 14.50 GHz -0.8 -0.5 V Output Power at Psat1) f = 13.75 - 14.50 GHz 30 31 dBm Power Gain at Psat1) f = 13.75 - 14.50 GHz 24 26 dB Drain Current at Psat1) f = 13.75 - 14.50 GHz 1250 1400 mA Power Added Efficiency at Psat1) f = 13.75 - 14.50 GHz 23 % Gain Flatness f = 13.75 - 14.50 GHz 0.5 1.0 dB Input Return Loss f = 13.75 - 14.50 GHz -8 -6 dB Output Return Loss f = 13.75 - 14.50 GHz -10 -8 dB Output TOI2) Δf = 10 MHz 2-Tone Test Output power / Tone = +22 dBm 40 dBm Supply Current VDD = +5 V 1300 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point
17/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436
5.4 Plots of Performances
12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Small Signal Gain (dB) 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) -40 -35 -30 -25 -20 -15 -10 Input / Output Return Loss (dB) Input Return Loss Output Return Loss Input / Output Return Loss vs. Frequency VDD = +5 V, IDD = 1300 mA, Pin = -20 dBm S-parameter Small Signal Gain vs. Frequency VDD = +5 V, IDD = 1300 mA, Pin = -20 dBm
18/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 8 10 12 14 16 18 20 22 24 26 28 Output Power / Tone (dBm) TOI (dBm) Frequency (GHz) Power Added Efficiency (%) Pin = +5 dBm Pin = +0 dBm Pin = -5 dBm Pin = -10 dBm -15 -10 -5 0 5 10 15 Input Power (dBm) Output Power (dBm) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 IDD (mA) Frequency (GHz) Output Power (dBm) Pin = +5 dBm Pin = +0 dBm Pin = -5 dBm Pin = -10 dBm Output Power vs. Frequency VDD = +5 V, IDD = 1300 mA Power Added Efficiency vs. Frequency VDD = +5 V, IDD = 1300 mA Output Power, IDD vs. Input Power VDD = +5 V, IDD = 1300 mA Output TOI vs. Output Power / Tone VDD = +5 V, IDD = 1300 mA, Δf = 10 MHz
- Mounting Instructions for Flange Package
6.1 Screw Mounting
6.1.1 The flange of package should be attached using screws. Torque conditions are shown in table 1. Table 1. Recommended and Maximum Torque for Screw Mounting
6.1.2 First, tighten the screws with a torque driver set to 5 N-cm
thermal resistance between the package and heat sinker. 6.2.2 After soldering, the flux residue should be removed by appropriate cleaning methods.
6.2.3 The recommended soldering conditions are as follows:
20/20 ASB Inc. sales@asb.co.kr April 2016 ASX1436 7. Package Outline ＊Please note the 1.51 mm of the height of the lead from the bottom of the metal base when it is to be mounted. (End of Datasheet) Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. Units: mm [in]