ASX1037 ASB | Alldatasheet
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Technical content
1/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 1. Product Overview
1.1 General Description
ASX1037 is a two-stage internally matched MMIC Power Amplifier which operates between 8.5GHz and 10.5 GHz frequency range. This product is well suited for X band applications.
1.2 Features
Frequency Range: 8.5 - 10.5 GHz Saturated Output Power: 37 dBm Power Added Efficiency: 38 % Small Signal Gain: 15 dB Output Third Order Intercept Point: 42 dBm Bias: VDD = +7 V, IDD = 1300 mA, VGG = -1.05 V (Typical) 100% DC and RF tested
1.3 Applications
Point to Point Radio Communications
1.4 Package Profile & RoHS Compliance
10-lead Flange Package RoHS-compliant ASX1037 Data Sheet X Band Power Amplifier MMIC
2/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 8.5 - 10.5 GHz -1.05 -0.6 V Output Power at Psat1) f = 8.5 - 10.5 GHz 36 37 dBm Power Gain at Psat1) f = 8.5 - 10.5 GHz 11 12 dB Drain Current at Psat1) f = 8.5 - 10.5 GHz 1800 2200 mA Power Added Efficiency at Psat1) f = 8.5 - 10.5 GHz 38 % Gain Flatness f = 8.5 - 10.5 GHz 1.5 2.0 dB Input Return Loss f = 8.5 – 10.5 GHz -10 -6 dB Output Return Loss f = 8.5 - 10.5 GHz -12 -8 dB Output TOI2) Δf = 10 MHz 2-Tone Test Output power / Tone = +28 dBm 42 dBm Supply Current VDD = +7 V 1300 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point
2.2 Product Specifications
Test conditions : T = +25 C, VDD= +7 V, CW, VGG = -1.05 V typical, ZO = 50 Parameter Min Typ Max Unit Frequency 8.5 10.5 GHz Small Signal Gain 14 15 dB Input Return Loss -10 -6 dB Output Return Loss -12 -8 dB Supply Current 1300 mA
2.3 Absolute Maximum Ratings
Parameters Max. Ratings Operation Case Temperature (Tc) -40 to 85 C Storage Temperature (Tstg) -55 to 125 C Drain Voltage (VDD) +9 V Gate Voltage (VGG) -5.0 to -0.6 V Input RF Power (CW) +30 dBm
3/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037
2.4 Pin Descriptions
1,5 Vg Gate voltage
3 RF IN Input, matched to 50 ohms
6,10 Vd Drain voltage
8 RF OUT Output, matched to 50 ohms
2,4,7,9 NC No internal connection ( open or connected to GND )
4/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 3. Application: 8.5 - 10.5 GHz
3.1 Application Circuit
3.2 Biasing Procedure
Make sure no RF power is applied to the device before continuing. Pinch off device by setting VGG to -1.5 V. Raise VDD to +7.0 V while monitoring drain current. Raise VGG until drain current reaches 1300 mA. VGG should be between -1.5 and -0.6 V. Apply RF power. To improve the thermal and RF performance, ASB recommends a heat sink er attached to the bottom of the package with an Indium alloy preform. Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module.
5/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037
3.3 Performance Table
Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 8.5 - 10.5 GHz -1.05 -0.6 V Output Power at Psat1) f = 8.5 - 10.5 GHz 36 37 dBm Power Gain at Psat1) f = 8.5 - 10.5 GHz 11 12 dB Drain Current at Psat1) f = 8.5 - 10.5 GHz 1800 2200 mA Power Added Efficiency at Psat1) f = 8.5 - 10.5 GHz 38 % Gain Flatness f = 8.5 - 10.5 GHz 1.5 2.0 dB Input Return Loss f = 8.5 – 10.5 GHz -10 -6 dB Output Return Loss f = 8.5 - 10.5 GHz -12 -8 dB Output TOI2) Δf = 10 MHz 2-Tone Test Output power / Tone = +28 dBm 42 dBm Supply Current VDD = +7 V 1300 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point
6/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037
3.4 Plots of Performances
Frequency (MHz) -40 -35 -30 -25 -20 -15 -10 Input / Output Return Loss (dB) Input Return Loss Output Return Loss Frequency (GHz) Small Signal Gain (dB) S-parameter Input / Output Return Loss vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm Small Signal Gain vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = -20 dBm
7/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) -15 -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 IDD (mA) 8 8.5 9 9.5 10 10.5 11 11.5 Frequency (GHz) Power Added Efficiency (%) Pin = +25 dBm Pin = +15 dBm Pin = +5 dBm Pin = -5 dBm 8 8.5 9 9.5 10 10.5 11 11.5 Frequency (GHz) Output Power (dBm) Pin = +25 dBm Pin = +15 dBm Pin = +5 dBm Pin = -5 dBm Output Power vs. Frequency VDD = +7 V, IDD = 1300 mA Power Added Efficiency vs. Frequency VDD = +7 V, IDD = 1300 mA Output Power, IDD vs. Input Power VDD = +7 V, IDD = 1300 mA Output TOI vs. Output Power / Tone VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz
8/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 -15 -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 IDD (mA) -15 -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 IDD (mA) -15 -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 IDD (mA) -15 -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 IDD (mA) VDD = +7 V, IDD = 1300 mA @ 8.5 GHz VDD = +7 V, IDD = 1300 mA @ 9.5 GHz VDD = +7 V, IDD = 1300 mA @ 10.0 GHz VDD = +7 V, IDD = 1300 mA @ 9.0 GHz Output Power, Drain Current vs. Input Power by Temperature
9/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 -15 -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 IDD (mA) VDD = +7 V, IDD = 1300 mA @ 10.5 GHz
10/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 9.0 GHz VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 9.5 GHz VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 10.0 GHz Output TOI vs. Output Power / Tone by Temperature VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @ 8.5 GHz
11/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 12 14 16 18 20 22 24 26 28 30 32 Output Power / Tone (dBm) TOI (dBm) VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz @10.5 GHz
12/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 -60 -40 -20 0 20 40 60 80 100 Temperature TOI (dBm) 8 8.5 9 9.5 10 10.5 11 Frequency (GHz) Output Power (dBm) Output TOI vs. Temperature VDD = +7 V, IDD = 1300 mA, Δf = 10 MHz, Output Power / Tone +28 dBm Output Power vs. Frequency VDD = +7 V, IDD = 1300 mA, Pin = +25 dBm, CW
- Mounting Instructions for Flange Package
4.1 Screw Mounting
4.1.1 The flange of package should be attached using screws. Torque conditions are shown in table 1. Table 1. Recommended and Maximum Torque for Screw Mounting
4.1.2 First, tighten the screws with a torque driver set to 5 N-cm
thermal resistance between the package and heat sinker. 4.2.2 After soldering, the flux residue should be removed by appropriate cleaning methods.
4.2.3 The recommended soldering conditions are as follows:
14/14 ASB Inc. sales@asb.co.kr June 2017 ASX1037 5. Package Outline ＊Please note the 1.51 mm of the height of the lead from the bottom of the metal base when it is to be mounted. (End of Datasheet) Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. Units: mm [in]