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1/5 ASB Inc.  sales@asb.co.kr  Tel: +82-42-528-7225 February 2010 ASW301 5 ~ 3000 MHz MMIC Amplifier (Supply Voltage = +5 V, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 2000 Gain dB 16.5 10.0 S11 dB -15 -12 S22 dB -15 -14 Output IP3 dBm 40.0 40.5 Noise Figure dB 6.7 7.0 Output P1dB dBm 22 22 Current mA 75 75 Device Voltage V +5 +5 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Parameters Units Min Typ Max Testing Frequency MHz 900 Gain dB 16.0 16.5 S11 dB -15 S22 dB -15 Output IP3 dBm 39 40 Noise Figure dB 6.7 7.0 Output P1dB dBm 21 22 Current mA 70 75 80 Device Voltage V +5 Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature +150 C Input RF Power (CW, 50  matched)* 25 dBm Features Description Absolute Maximum Ratings  16.5 dB Gain at 900 MHz  22 dBm P1dB at 900 MHz  40 dBm Output IP3 at 900 MHz  6.7 dB NF at 900 MHz  MTTF > 100 Years  Single Supply The ASW301, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both re- ceiver and transmitter of telecommunication systems up to 3 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. Product Specifications Typical Performance ASW301 Application Circuit  IF  500 ~ 2500 MHz Pin Configuration Pin No. Function

1 RF IN

2 GND

3 RF OUT & Bias

2/5 ASB Inc.  sales@asb.co.kr  Tel: +82-42-528-7225 February 2010 ASW301 5 ~ 3000 MHz MMIC Amplifier Pin No. Function Mounting Recommendation (In mm) Outline Drawing Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: < 200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow ESD Classification & Moisture Sensitivity Level Dimensions (In mm) Symbols MIN NOM MAX A 1.40 1.50 1.60 L 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 C 0.38 0.40 0.43 D 4.40 4.50 4.60 D1 1.40 1.60 1.75 E 3.64 --- 4.25 E1 2.40 2.50 2.60 e1 2.90 3.00 3.10 H 0.35 0.40 0.45 S 0.65 0.75 0.85 e 1.40 1.50 1.60 ASW301 Pxxxx Lot No. Part No.

3/5 ASB Inc.  sales@asb.co.kr  Tel: +82-42-528-7225 February 2010 ASW301 5 ~ 3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +8 dBm/tone se- parated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 70 150 300 450 Magnitude S21 (dB) 25 24 23 21 Magnitude S11 (dB) -9 -14 -15 -15 Magnitude S22 (dB) -15 -15 -15 -14 Output P1dB (dBm) 22 22 22 22 Output IP3 (dBm) 35.5 36.0 37.0 37.0 Noise Figure (dB) 6.8 6.8 7.0 6.5 Device Voltage (V) +5 Current (mA) 75 IF 70 ~ 450 MHz +5 V 100 200 300 400 500 -25 -20 -15 -10 S11 (dB) Frequency (MHz) 100 200 300 400 500 Gain (dB) Frequency (MHz) 100 200 300 400 500 -25 -20 -15 -10 S22 (dB) Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) C1=1000 pF L1=680 nH C2=1000 pF Vcc=5 V RF IN RF OUT C3=100pF C4=1 F ASW301 D1=5.6V Zener Diode R1=3 

4/5 ASB Inc.  sales@asb.co.kr  Tel: +82-42-528-7225 February 2010 ASW301 5 ~ 3000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Wide Band 500 ~ 2500 MHz +5 V Frequency (MHz) 500 900 1750 2000 2400 Magnitude S11 (dB) -13 -15 -14 -12 -11 Magnitude S22 (dB) -18 -15 -15 -14 -14 Output IP3 Device Voltage (V) +5 Current (mA) 75 0 500 1000 1500 2000 2500 3000 3500 Stability Factor Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 Gain (dB) Frequency (MHz) -40 o c o c o c 0 500 1000 1500 2000 2500 3000 3500 -20 -15 -10 S11 (dB) Frequency (MHz) -40 o c o c o c 0 500 1000 1500 2000 2500 3000 3500 -30 -25 -20 -15 -10 S22 (dB) Frequency (MHz) -40 o c o c o c C1=100 pF L1=33 nH C2=100 pF Vcc=5 V RF IN RF OUT C3=100pF C4=1 F ASW301 D1=5.6V Zener Diode R1=3 

5/5 ASB Inc.  sales@asb.co.kr  Tel: +82-42-528-7225 February 2010 ASW301 5 ~ 3000 MHz MMIC Amplifier -60 -40 -20 0 20 40 60 80 100 100 120 Current (mA) Temperature ( o P1dB vs. Frequency Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 2000 MHz) Output IP3 vs. Frequency Gain vs. Temperature -60 -40 -20 0 20 40 60 80 100 Gain (dB) Temperature ( o Frequency = 900 MHz 0 500 1000 1500 2000 2500 3000 P1dB (dBm) Frequency (MHz) -40 o c o c o c 0 500 1000 1500 2000 2500 3000 Output IP3 (dBm) Frequency (MHz) -40 o c o c o c 4 6 8 1 01 21 41 61 8 Output IP3 (dBm) Pout per Tone (dBm) -40 o c o c o c