ASTD ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/3
Specifications are subject to change without notice. ELECTRICAL CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS IP ASTD 1020 100 200 µµµµA ASTD 2030 200 300 ASTD 3040 300 400 ASTD 4050 400 500 ASTD 5060 500 600 VF IF = 3 mA ASTD 1020 135 mV ASTD 2030 130 ASTD 3040 125 ASTD 4050 120 ASTD 5060 110 VR IR = 500 µA 400 mV PLANAR TUNNEL (BACK) DIODE ASTD SERIES DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. FEATURES INCLUDE:
- Excellent Temperature Stability
- Fast Rise / Fall Times
- Available in Die Form MAXIMUM RATINGS IR 10 mA PDISS 3 ERG spike PDISS 50 mW @ TA = +60 O C TJ -65 to +110 O C TSTG -65 to +125 O C PACKAGE STYLE 51
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/3
PLANAR TUNNEL (BACK) DIODE Specifications are subject to change without notice. DYNAMIC ELECTRICAL CHARACTERISTICS TC = 25 OC Symbol Test Conditions Minimum Typical Maximum Units λλλλ F = 10 GHz RL = 10 KΩ ASTD 1020 1,000 mV/mW PIN = -20 dBm ASTD 2030 750 ASTD 3040 500 ASTD 4050 275 ASTD 5060 250 RV F = 10 GHz RL = 10 KΩ ASTD 1020 180 ΩΩΩΩ PIN = -20 dBm ASTD 2030 130 ASTD 3040 80 ASTD 4050 65 ASTD 5060 60 RS IR = 10 mA F = 100 MHz 7.0 ΩΩΩΩ ORDERING INFORMATION: ASTD-XXXX-XX 820 = Case Style 820 860 = Case Style 860 2030 3040 4050 5060
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 3/3
PLANAR TUNNEL (BACK) DIODE Specifications are subject to change without notice. PACKAGE STYLE 820 PACKAGE STYLE 860