AST54S ASB | Alldatasheet
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1/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 Parameters Rating Operating Case Temperature -40 to +85°C Storage Temperature -40 to +150°C Device Voltage +6 V Operating Junction Temperature +150°C Input RF Power (CW, 50ohm matched)* 22 dBm Features Description ·19.0 dB Gain at 900 MHz ·0.4 dB NF at 900 MHz ·30 dBm OIP3 at 900 MHz ·18 dBm P1dB at 900 MHz ·One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of frequency up to 3.5 GHz. It is also suitable for use in the low noise amplifier block of the mobile wireless systems of CDMA, WCDMA, WLAN so on. The amplifier is available in an SOT-343 package and passes the stringent DC, RF, and reliability tests. Applications ·GPS Receiver ·CDMA, GSM, W-CDMA, PCS ·WiBro, WiMax, WLAN ·Gain Block ·IF Amplifier Product Specifications* More Information Tel: (82) 42-528-7223 Fax: (82) 42-528-7222 ASB Inc., 4th FI. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea Typical Performance Applications ·GPS Receiver ·CDMA, GSM, W-CDMA, PCS ·WiBro, WiMAX, WLAN ·Gain Block ·IF Amplifier ·Low Noise Amplifier Absolute Maximum Ratings Package Style: SOT-343 Pin Configuration Pin No. Function 1 RF OUT / Bias 2,4 GND 3 RF IN Application Circuit · LTE (700) · CDMA/ GSM · 1575 MHz (GPS) · 1500-1600 MHz (GPS) · 1210-1620 MHz (GPS Wide) · 1210-1620 MHz (High current) · 1100-1700 MHz (GPS Wide) · 2000 MHz (Low Noise) · 2000 MHz (High Gain) · 2338 MHz (XM) · 2400 MHz · WiMAX · LTE 2600 · 3300 MHz · 50-1000 MHz (50ohms) · 470-860 MHz (50ohms) · TETRA 360-450 MHz · IF 20-108 MHz
2/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier Pin NO. Function Pin NO. Function. 1 RF OUT / Bias 3 RF IN 2 GND 4 GND Outline Drawing Mounting Recommendation (in mm) 1 2 3
3/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 200400600800100012000510152025 Gain (dB)Frequency (MHz)20040060080010001200-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 20040060080010001200-25-20-15-10-50 S22 (dB)Frequency (MHz)050010001500200025003000012345678910 Stability FactorFrequency [MHz] 1) OIP3 is measured with two tones at an output power of + 4dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT Board Layout (FR4, 23x13 mm2, 0.8T) Note: 1) the length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. *P1 Length: 3 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom LTE(700) 698 ~ 787 +5 V
4/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier C1=100 pFC2=100 pFRF OUTAST54S C4=1 nFRF IN L3=22 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL2=39 nH R3=43 W L1=6.8 nH R4=430C3=1 nFC6=0.5 pF =27 W@ 40mA@ 60mA 5006007008009001000110012000510152025 Gain (dB)Frequency (MHz)500600700800900100011001200-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 500600700800900100011001200-25-20-15-10-50 S22 (dB)Frequency (MHz)050010001500200025003000012345678910 Stability FactorFrequency [MHz] 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. S-parameters & K-factor APPLICATION CIRCUIT CDMA/ GSM 824~960 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top
5/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT GPS 1575 +3 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top C1=100 pFC2=100 pFRF OUTAST54S C4=1 nFRF IN L2=8.2 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=3.9 nH R3=10 W C3=0.75 pF 050010001500200025003000-30-25-20-15-10-505 S11 (dB)Frequency (MHz)05001000150020002500300005101520 Gain (dB)Frequency (MHz) 050010001500200025003000-20-15-10-505 S22 (dB)Frequency (MHz)050010001500200025003000012345 Stability FactorFrequency (MHz)
6/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier C1=100 pFC2=100 pFRF OUTAST54S C4=1 nFRF IN L2=8.2 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=5.6 nH R3=43 W C3=0.5 pF 130014001500160017001800051015202530 Gain (dB)Frequency (MHz)130014001500160017001800-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 130014001500160017001800-40-35-30-25-20-15-10-50 S22 (dB)Frequency (MHz)050010001500200025003000012345678910 Stability FactorFrequency [MHz] 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT Board Layout (FR4, 23x13 mm2, 0.8T) Note: 1) the length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. *P1 Length:3 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom Parameter Symbol Unit Frequency (MHz) 1500 1600 Power Gain Gp dB 15.2 14.9 Noise Figure NF dB 0.45 0.5 Input Return Loss RLin dB -18 -18 Output Return Loss RLout dB -18 -18 1 dB Gain Compression Output Power Po(1dB) dBm 18 18 3rd Intercept Point Output Power1) OIP3 dBm 33 33 Circuit Current Icc mA 40 40 Top GPS 1500 ~ 1600 +5 V / 40 mA
7/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT Board Layout (FR4, 23x13 mm2, 0.8T) Note: 1) the length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. *P1 Length: 2 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom GPS 1210 ~ 1620 +3 V / 18 mA C1=100 pFC2=100 pFRF OUTAST54S C4=1 nFRF IN L2=8.2 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=6.8 nH R3=10 W C3=0.75 pF 050010001500200025003000012345 Stability FactorFrequency (MHz) 05001000150020002500300005101520 Gain (dB)Frequency (MHz)050010001500200025003000-30-25-20-15-10-505 S11 (dB)Frequency (MHz) 050010001500200025003000-20-15-10-505 S22 (dB)Frequency (MHz)
8/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier C1=100 pFC2=100 pFRF OUTAST54S C4=1 nFRF IN L2=8.2 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=6.8 nH R3=43 W C3=0.75 pF 100012001400160018000510152025 Gain (dB)Frequency (MHz)10001200140016001800-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 10001200140016001800-35-30-25-20-15-10-50 S22 (dB)Frequency (MHz)0100020003000400050006000700080009000012345678910 Stability FactorFrequency [MHz] 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT Board Layout (FR4, 23x13 mm2, 0.8T) Note: 1) the length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. *P1 Length: 1 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom Parameter Symbol Unit Frequency (MHz) 1210~1270 1560~1620 Power Gain Gp dB 17.4 15.2 Noise Figure NF dB 0.45 0.45 Input Return Loss RLin dB -12 -10 Output Return Loss RLout dB -18 -18 1 dB Gain Compression Output Power Po(1dB) dBm 17 18 3rd Intercept Point Output Power1) OIP3 dBm 30 32 Circuit Current Icc mA 40 40 Top GPS 1210 ~ 1620 +5 V / 40 mA
9/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of –5 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT GPS 1100 ~ 1700 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top C1=100 pFC2=100 pFRF OUTAST54S C4=1 nFRF IN L2=27 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=6.8 nH R3=160 W C3=0.5 pFR4=390 WC6=1 nFL3=22 nH 05001000150020002500300005101520 Gain (dB)Frequency (MHz)050010001500200025003000-30-25-20-15-10-505 S11 (dB)Frequency (MHz) 050010001500200025003000-20-15-10-505 S22 (dB)Frequency (MHz)050010001500200025003000012345 Stability FactorFrequency (MHz)
10/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier C1=33 pFC2=18 pFRF OUTAST54S C4=1 nFRF IN L2=18 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=6.8 nH R3=43 W C3=0.5 pF 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT S11 < -18 dB & Low Noise 2000 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top 170018001900200021002200230005101520 Gain (dB)Frequency (MHz)1700180019002000210022002300-25-20-15-10-50 S11 (dB)Frequency (MHz) 1700180019002000210022002300-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)
11/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT S11 < -18 dB & High Gain 2000 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top C1=100 pFC2=33 pFRF OUTAST54S C3=1 nF L2=12 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=8.2 nH R3=43 WC4=2 pFRF INC3=1 pF4 mm 0500100015002000250030003500012345 Stability FactorFrequency (MHz) 0500100015002000250030003500-20-15-10-505 S11 (dB)Frequency (MHz) -40oc 25oc 85oc 0500100015002000250030003500051015202530 Gain (dB)Frequency (MHz) -40oc 25oc 85oc 0500100015002000250030003500-25-20-15-10-50 S22 (dB)Frequency (MHz) -40oc 25oc 85oc
12/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier P1dB vs. Temperature Current vs. Temperature Output IP3 vs. Tone Power (Frequency = 2000 MHz) Output IP3 vs. Temperature Gain vs. Temperature -60-40-20020406080100353739414345 Current (mA)Temperature (oC)Frequency = 2000 MHz-60-40-2002040608010011121314151617 Gain (dB)Temperature (oC)Frequency = 2000 MHz -60-40-20020406080100131517192123 P1dB (dBm)Temperature (oC)Frequency = 2000 MHz-60-40-20020406080100283032343638 Output IP3 (dBm)Temperature (oC)Frequency = 2000 MHz 0123456789101520253035404550 Output IP3 (dBm)Pout per Tone (dBm) -40oc 25oc 85oc
13/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT XM 2338 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top C1=33 pFC2=33 pFRF OUTAST54S C4=1 nFRF IN L2=22 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=8.2 nH R3=43 W C3=1 pF3 mm 100015002000250030003500-30-25-20-15-10-505 S11 (dB)Frequency (MHz)1000150020002500300035000510152025 Gain (dB)Frequency (MHz) 100015002000250030003500-30-25-20-15-10-505 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)
14/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT S11 < -18 dB 2400 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top 210022002300240025002600270005101520 Gain (dB)Frequency (MHz)2100220023002400250026002700-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 2100220023002400250026002700-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz) C1=22 pFC2=22 pFRF OUTAST54S C4=1 nFRF IN L2=15 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=8.2 nH R3=43 W C3=0.75 pF
15/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT WiMAX, LTE 2300 ~ 2700 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top C1=22 pFC2=22 pFRF OUTAST54S C5=1 nFRF IN L2=15 nH*P1 R1=820 W C7=1 uF *P1 VDD R2=5.1 kWL1=8.2 nH R3=51 W C3=0.75 pFC4=0.5 pF C6=2 pF 220023002400250026002700280005101520 Gain (dB)Frequency (MHz)2200230024002500260027002800-25-20-15-10-50 S11 (dB)Frequency (MHz) 2200230024002500260027002800-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)
16/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 2300240025002600270028002900300005101520 Gain (dB)Frequency (MHz)23002400250026002700280029003000-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 23002400250026002700280029003000-25-20-15-10-50 S22 (dB)Frequency (MHz) 1) OIP3 is measured with two tones at an output power of + 4dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT Board Layout (FR4, 23x13 mm2, 0.8T) Bottom LTE (2600) 2600~2700 +5 V 0500100015002000250030003500012345 Stability FactorFrequency (MHz)
17/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT S11 < -18 dB 3300 +5 V Board Layout (FR4, 23x13 mm2, 0.8T) Bottom Top C1=3 pFC2=22 pFRF OUTAST54S C4=1 nFRF IN L2=8.2 nH*P1 R1=820 W C5=1 uF *P1 VDD R2=5.1 kWL1=10 nH R3=43 W C3=0.5 pF 300031003200330034003500360005101520 Gain (dB)Frequency (MHz)3000310032003300340035003600-25-20-15-10-50 S11 (dB)Frequency (MHz) 3000310032003300340035003600-25-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)
18/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT CATV (50ohms) 50 ~ 1000 +5 V Board Layout (FR4, 28x16 mm2, 0.8T) Bottom Top Parameter Symbol Unit Frequency (MHz) 50 500 860 Power Gain Gp dB 20 19 18 Noise Figure NF dB 1.0 1.05 1.1 Input Return Loss RLin dB -18 -12 -16 Output Return Loss RLout dB -9 -12 -18 1 dB Gain Compression Output Power Po(1dB) dBm 15 17 16 3rd Intercept Point Output Power1) OIP3 dBm 26 29 28 Circuit Current Icc mA 40 40 40 020040060080010000510152025 Gain (dB)Frequency (MHz)02004006008001000-25-20-15-10-50 S11 (dB)Frequency (MHz) 02004006008001000-25-20-15-10-50 S22 (dB)Frequency (MHz)02004006008001000012345 Stability FactorFrequency (MHz) C1=1 nFC2=1 nFRF OUTAST54S C4=1 nFRF IN L2=330 nH R1=820 W C5=1 uFVDD R2=5.1 kWL1=330 nH R3=43 W C3=2.2 pFL3=4.7 nH R3=510 WC6=1 nF
19/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 0300600900120015000510152025 Gain (dB)Frequency (MHz)030060090012001500-30-25-20-15-10-505 S11 (dB)Frequency (MHz) 030060090012001500-30-25-20-15-10-505 S22 (dB)Frequency (MHz)03006009001200150018002100012345 Stability FactorFrequency (MHz) C1=1 nFC2=1 nFRF OUTAST54S C4=1 nFRF IN L2=330 nH R1=820 W C5=1 uFVDD R2=5.1 kWL1=39 nH R3=43 W C3=2.2 pFL3=2.7 nH R3=680 WC6=1 nF 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT CMMB (50ohms) 470 ~ 860 +5 V Board Layout (FR4, 28x16 mm2, 0.8T) Bottom Top Parameter Symbol Unit Frequency (MHz) 470 860 Power Gain Gp dB 20 18 Noise Figure NF dB 0.9 0.9 Input Return Loss RLin dB -17 -12 Output Return Loss RLout dB -15 -18 1 dB Gain Compression Output Power Po(1dB) dBm 17 16 3rd Intercept Point Output Power1) OIP3 dBm 29 28 Circuit Current Icc mA 40 40
20/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier C1=1 nFC2=1 nFRF OUTAST54S C4=1 nFRF IN L2=330 nH R1=820 W C5=1 uFVDD R2=5.1 kWL1=39 nH R3=43 W C3=2.2 pFL3=1.2 nH R4=1 kWC6=1 nF 025050075010000510152025 Gain (dB)Frequency (MHz)02505007501000-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 02505007501000-25-20-15-10-50 S22 (dB)Frequency (MHz)050010001500200025003000012345678910 Stability FactorFrequency [MHz] 1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT TETRA 360 ~ 450 +5 V Board Layout (FR4, 28x16 mm2, 0.8T) Bottom Top Parameter Symbol Unit Frequency (MHz) 360 450 Power Gain Gp dB 22.6 22.2 Noise Figure NF dB 0.8 0.8 Input Return Loss RLin dB -18 -18 Output Return Loss RLout dB -12 -12 1 dB Gain Compression Output Power Po(1dB) dBm 18 18 3rd Intercept Point Output Power1) OIP3 dBm 29 29 Circuit Current Icc mA 40 40
21/21 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 June 2012 AST54S High Gain, Low Noise Amplifier 050010001500200025003000012345678910 Stability FactorFrequency [MHz] C1=1 uFC2=1 uFRF OUTAST54S C4=1 nF L2=8.2 uH R1=820 W C5=1 uFVDD R2=5.1 kWL1=8.2 uH R3=62 W R3=820 WC6=1 nF 0501001502002500510152025 Gain (dB)Frequency (MHz)050100150200250-30-25-20-15-10-50 S11 (dB)Frequency (MHz) 050100150200250-25-20-15-10-50 S22 (dB)Frequency (MHz) 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz. Schematic S-parameters & K-factor APPLICATION CIRCUIT IF 20 ~ 108 +3.3V Board Layout (FR4, 28x16 mm2, 0.8T) Bottom Top Parameter Symbol Unit Frequency (MHz) 20 108 Power Gain Gp dB 19.7 19.6 Noise Figure NF dB 1.1 1.1 Input Return Loss RLin dB -20 -18 Output Return Loss RLout dB -13 -13 1 dB Gain Compression Output Power Po(1dB) dBm 7 7 3rd Intercept Point Output Power1) OIP3 dBm 17 17 Circuit Current Icc mA 12 12