ASL51S9_17 ASB | Alldatasheet
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Technical content
1/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9 1. Product Overview
1.1 General Description
ASL51S9 is a low noise amplifier with high linearity over a wide range of frequency up to 1.7 ~ 3.0 GHz with S11 & S22 < -10 dB. It is also suitable for use in the mobile wireless systems such as PCS, WCDMA, LTE, WiBro, WiMAX, WLAN and so on. It has an active bias circuit for stable current over temperature and process variation. The amplifier is available in SOT89 package and passes the stringent DC, RF and reliability tests.
1.2 Features
16.4 dB Gain at 2000 MHz 17.5 dBm P1dB at 2000 MHz 37.0 dBm Output IP3 at 2000 MHz 0.8 dB NF at 2000 MHz MTTF > 100 Years Single Supply: +3.3 V
1.3 Applications
Low Noise Amplifier for PCS and WCDMA Other Low Noise Application
1.4 Package Profile & RoHS Compliance
SOT89, 4.5x4.0 mm2, surface mount RoHS-compliant ASL51S9 Data Sheet High Gain, Low Noise Amplifier
2/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9 2. Summary on Product Performances
2.1 Typical Performance
Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 1700 1800 1900 2000 MHz Noise Figure 0.70 0.75 0.75 0.80 dB Gain 17.8 17.3 16.9 16.3 dB Output IP31) 37.0 37.0 37.0 37.0 dBm Output P1dB 17.5 17.5 17.5 17.5 dBm Current 55 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
2.2 Product Specification
Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Min Typ Max Unit Frequency 2000 MHz Noise Figure 0.80 dB Gain 16.3 dB S11 -18.0 dB S22 -11.0 dB Output IP3 37.0 dBm Output P1dB 17.5 dBm Current 55 mA Device Voltage +3.3 V
2.3 Pin Configuration
Pin Description Simplified Outline
1 RF_IN
2 Ground
3 RF_OUT & Bias
3/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9
2.4 Absolute Maximum Ratings
Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +5.5 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm
2.5 Thermal Resistance
Symbol Description Typ Unit Rth Thermal resistance from junction to lead 110 C/W
2.6 ESD Classification & Moisture Sensitivity Level
HBM Class 1A Voltage Level: 400 V MM Class A Voltage Level: 50 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked)
4/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9 3. Application: 1700 ~ 2000 MHz (Vdevice = +3.3 V)
3.1 Application Circuit & Evaluation Board
Symbol Value Size Description Manufacturer ASL51S9 - - MMIC Amplifier ASB C1 3 pF 0603 DC block and matching capacitor Murata C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C3 1 F 0603 Decoupling capacitor Murata L1 5.6 nH 0603 Matching inductor Murata L2 18 nH 0603 RF choke inductor Murata C1 C2 ASL51S9 RF IN RF OUT Vdevice = +3.3 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A2
5/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9
3.2 Performance Table
Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 1700 1800 1900 2000 MHz Noise Figure 0.70 0.75 0.75 0.80 dB Gain 17.8 17.3 16.9 16.3 dB Output IP31) 37.0 37.0 37.0 37.0 dBm Output P1dB1) 17.5 17.5 17.5 17.5 dBm Current 55 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz
3.3 Plot of S-parameter & Stability Factor
0 500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) -40 -30 -20 -10 S-parameters (dB) S21 S12 S11 S22 K
6/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9
3.4 Plot of Noise Figure
Frequency (MHz) 0.25 0.5 0.75 1.25 1.5 NF (dB)
7/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9 4. Package Outline (SOT89, 4.5x4.0x1.5 mm) 5. Surface Mount Recommendation (In mm) Symbols Dimensions (In mm) MIN NOM MAX A 1.40 1.50 1.60 L 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 C 0.38 0.40 0.43 D 4.40 4.50 4.60 D1 1.40 1.60 1.75 E 3.64 --- 4.25 E1 2.40 2.50 2.60 e1 2.90 3.00 3.10 H 0.35 0.40 0.45 S 0.65 0.75 0.85 e 1.40 1.50 1.60 ASL51S9 Pxxxx Lot No. Part No. NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. Recommended is that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side.
8/8 ASB Inc. sales@asb.co.kr January 2017 ASL51S9 6. Recommended Soldering Reflow Profile (End of Datasheet) Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB 20~40 sec 260 C 200 C 150 C 60~180 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec)