ASL41S9 ASB | Alldatasheet
Document overview
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Technical content
1/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9 1. Product Overview
1.1 General Description
ASL41S9, a wideband linear low noise amplifier MMIC, h as low noise and high linearity, being suitable for use in both receiver and transmitter of telecommunication systems about 500-1500 MHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF and reliability tests .
1.2 Features
17.5 dB Gain at 900 MHz 0.55 dB NF at 900 MHz 22.5 dBm P1dB at 900 MHz Current Adjustable: OIP3 at 900 MHz of 38 dBm @ 72mA, 43 dBm @ 90 mA MTTF > 100 Years Single Supply: +5 V
1.3 Applications
Low Noise Amplifier for LTE, GSM, and CDMA Other Low Noise Application
1.4 Package Profile & RoHS Compliance
SOT89, 4.5x4.0 mm2, surface mount RoHS-compliant ASL41S9 Data Sheet 5 ~ 4000 MHz High Linearity LNA MMIC
2/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9 2. Summary on Product Performances
2.1 Typical Performance
Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 700 900 1200 700 900 1200 MHz Current 72 90 mA Device Voltage +5 +5 V 1) OIP3 is measured with two tones at the output power of +5 dBm/tone separated by 1 MHz.
2.2 Product Specification
Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Min Typ Max Unit Frequency 900 MHz Noise Figure 0.55 0.65 dB Gain 16.5 17.5 dB S11 -15 -18 dB S22 -17 -20 dB Output IP3 36 38 dBm Output P1dB 21.5 22.5 dBm Current 57 72 87 mA Device Voltage +5 V
2.3 Pin Configuration
Pin Description Simplified Outline
1 RF_IN
2 Ground
3 RF_OUT & Bias
3/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9
2.4 Absolute Maximum Ratings
Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +5.5 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm
2.5 Thermal Resistance
Symbol Description Typ Unit Rth Thermal resistance from junction to lead 80 C/W
2.6 ESD Classification & Moisture Sensitivity Level
HBM Class 1A Voltage Level: 400 V MM Class A Voltage Level: 50 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked)
4/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9 3. Application: 600 ~ 1200 MHz (72 mA @ R1 = 5.1 k)
3.1 Application Circuit & Evaluation Board
Symbol Value Size Description Manufacturer ASL41S9 - - MMIC Amplifier ASB C1 8 pF 0603 DC blocking capacitor Murata C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 15 nH 0603 Matching inductor Murata L2 27 nH 0603 RF choke inductor Murata R1 5.1 k 0603 Current adjust resistor Samsung R2 51 k 0603 Bias resistor Samsung Vdevice = +5 V RF OUTRF IN ASL41S9 C2C1 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A13 Note: 1) Connect 0 1) Note: 1) Connect 0 Note : A shunt R1 is a bias resistor requisite to operate ASL41S9 properly. A user can easily ADJUST an operating current.
5/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9
3.2 Performance Table
Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 600 700 800 900 1000 1100 1200 MHz S11 -15 -20 -20 -18 -18 -18 -18 dB S22 -18 -20 -20 -20 -20 -20 -20 dB Current 72 mA Device Voltage +5 V 1) OIP3 is measured with two tones at the output power of +5 dBm/tone separated by 1 MHz.
3.3 Plot of S-parameter & Stability Factor
0 500 1000 1500 2000 2500 3000 Frequency (MHz) -60 -50 -40 -30 -20 -10 S-parameters (dB) Stability Factor, K S21 S12 S11 S22 K
6/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9
3.4 Plot of Noise Figure
Frequency (MHz) 0.5 1.5 NF (dB) NF
7/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9 4. Application: 600 ~ 1200 MHz (90 mA @ R1 = 5.6 k)
4.1 Application Circuit & Evaluation Board
Symbol Value Size Description Manufacturer ASL41S9 - - MMIC Amplifier ASB C1 8 pF 0603 DC blocking capacitor Murata C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 15 nH 0603 Matching inductor Murata L2 27 nH 0603 RF choke inductor Murata R1 5.6 k 0603 Current adjust resistor Samsung R2 51 k 0603 Bias resistor Samsung Vdevice = +5 V RF OUTRF IN ASL41S9 C2C1 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A13 Note: 1) Connect 0 1) Note: 1) Connect 0 Note : A shunt R1 is a bias resistor requisite to operate ASL41S9 properly. A user can easily ADJUST an operating current.
8/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9
4.2 Performance Table
Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 600 700 800 900 1000 1100 1200 MHz S11 -15 -20 -20 -18 -18 -18 -18 dB S22 -18 -20 -20 -20 -20 -20 -20 dB Current 90 mA Device Voltage +5 V 1) OIP3 is measured with two tones at the output power of +7dBm/tone separated by 1 MHz.
4.3 Plot of S-parameter & Stability Factor
0 500 1000 1500 2000 2500 3000 Frequency (MHz) -60 -50 -40 -30 -20 -10 S-parameters (dB) Stability Factor, K S21 S12 S11 S22 K
9/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9
4.4 Plot of Noise Figure
Frequency (MHz) 0.5 1.5 NF (dB) NF
10/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9 5. Package Outline (SOT89, 4.5x4.0x1.5 mm) 6. Surface Mount Recommendation (In mm) Symbols Dimensions (In mm) MIN NOM MAX A 1.40 1.50 1.60 L 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 C 0.38 0.40 0.43 D 4.40 4.50 4.60 D1 1.40 1.60 1.75 E 3.64 --- 4.25 E1 2.40 2.50 2.60 e1 2.90 3.00 3.10 H 0.35 0.40 0.45 S 0.65 0.75 0.85 e 1.40 1.50 1.60 ASL41S9 Pxxxx Lot No. Part No. NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side.
11/11 ASB Inc. sales@asb.co.kr June 2014 ASL41S9 7. Recommended Soldering Reflow Profile (End of Datasheet) 20~40 sec 260 C 200 C 150 C 60~180 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec)