TAN250A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 60 V BVCES IC = 25 mA RBE = 10 Ω 60 V BVEBO IE = 20 mA 4.0 V ICBO VCB = 50 V 12 mA hFE VCE = 5 V IC = 1.0 A 20 120 --- POUT PG hh C VCC = 50 V P IN = 13 W f = 960 to 1215 MHz Pulse Width = 20 µS Duty Cycle = 5 % 250 6.0 7.0 W dB PACKAGE STYLE RF POWER TRANSISTOR TAN250A DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE:
- · Gold Metallization
- · Hermetic Package
- · Input/Output Matching MAXIMUM RATINGS IC 30 A VCB 60 V PDISS 575 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC qq JC 0.30 OC/W