PT3642 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 40 V BVCEX IC = 200 mA V BE = -1.5 V 65 V BVCBO IC = 500 µA 65 V ICEO VCE = 30 V 250 µµµµA IEBO VEB = 4.0 V 250 µµµµA hFE VCE = 5.0 V IC = 1.0 A 5.0 --- Cob VCB = 30 V f = 1.0 MHz 20 pF ft VCE = 28 V IC = 150 mA f = 100 MHz 400 MHz Pout GP ηηηηC VCE = 28 V f = 175 MHz 13.5 5.8 W dB NPN SILICON RF POWER TRANSISTOR PT3642 DESCRIPTION: The ASI PT3642 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400MHz. FEATURES INCLUDE:
- Emitter Ballasted
- Common Emitter Package MAXIMUM RATINGS IC 3.0 A VCE 40 V PDISS 23 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 7.6 °C/W PACKAGE STYLE TO- 60 1 = EMITTER 2 = BASE 3 = COLLECTOR CASE = EMITTER