MV1863D ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VB IR = 10 µA6 0 V IR VR = 55 V 100 µµµµA TR C = -4/C = -60 f = 1.0 MHz 2.6 3.3 RATIO RS VR = 4.0 V f = 500 MHz 1.1 Ohms Q VR = 4.0 V f = 100 MHz 300 --- Cp f = 1.0 MHz 0.18 pF Ls 0.8 µµµµH SILICON ABRUPT TUNING VARACTOR DIODE MV1863D DESCRIPTION: The ASI MV1863D is a Passivated Epitaxial Silicon Abrupt Tuning Varactor Diode. MAXIMUM RATINGS I 100 mA V 60 V PDISS 500 mW @ TC = 25 O C TJ -65 O C to +175 O C TSTG -65 O C to +200 O C θθθθJC 0.3 O C/W PACKAGE STYLE 31