ASIMM8006

MM8006 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 3.0 mA 10 V BVCBO IC = 1.0 µA 15 V ICBO VCB = 15 V VCB = 15 V T A = 150 °C 0.01 1.0 µµµµA BVEBO IE = 10 µA 3.0 V hFE VCE = 1.0 V IC = 1.0 mA 25 --- VCE(SAT) IC = 10 mA I B = 1.0 mA 0.4 V VBE(SAT) IC = 10 mA I B = 1.0 mA 1.0 V ft VCE = 10 V I C = 4.0 mA f = 100 MHz 1000 MHz Cob VCB = 0 V f = 140 KHz VCB = 10 V f = 140 KHz 3.0 1.7 pF Cib VEB = 0.5 V f = 140 KHz 2.0 pF NF VCE = 6.0 V IC = 1.0 mA f = 60 MHz 6.0 dB Gpe VCB = 12 V I C = 6.0 mA f = 200 MHz 15 dB Pout ηηηη VCB = 15 V I C = 8.0 mA f = 500 MHz 30 mW NPN SILICON HIGH FREQUENCY TRANSISTOR MM8006 DESCRIPTION: The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCBO 15 V PDISS 600 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C PACKAGE STYLE TO-72 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE