FH1100 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VF IF = 10 mA 550 mV IR VR = 1.0 V 1.0 µA VBR IR = 100 µA 5.0 V CT0 VR = 0 V f = 1.0 MHz 1.0 pF NF f = 890 MHz 10 dB QS IF = 10 mA 1.6 pC SILICON DIODE FH1100 DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. FEATURES INCLUDE:
- QS = 1.6 pC Typ.
- C = 1.0 pF Max. @ f = 890 MHz
- Hermetic Glass Package MAXIMUM RATINGS IF 10 mA VR 5.0 V PDISS 100 mW @ TC = 25 °C TJ -65 °C to +125 TSTG -65 °C to +150 Tsoldering +260 °C for 5 Seconds PACKAGE STYLE DO-7