BAM120 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 20 mA 60 V BVCEO IC = 50 mA 32 V BVEBO IE = 5.0 mA 4.0 V hFE VCE = 25 V IC = 3.5 A 15 100 --- COB VCE = 27 V f = 1.0 MHz 240 pF PG ηηηηC VCC = 27 V P OUT = 120 W f = 150 MHz 9.0 dB NPN SILICON RF POWER TRANSISTOR BAM120 PACKAGE STYLE .500 4L FLG 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10430 DESCRIPTION: The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz FEATURES:
- ηC = 65 % typ. @ 120 W/150 MHz
- PG = 9.0 dB typ. @ 120 W/150 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 12 A VCES 60 V VEBO 4.0 V PDISS 140 W @ TC = 25 TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 1.2 °C/W